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Semiconductor device and manufacturing method thereof

  • US 20080087923A1
  • Filed: 01/11/2007
  • Published: 04/17/2008
  • Est. Priority Date: 10/12/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device having a MOS field-effect transistor, comprising:

  • a stress film formed to cover a source, a drain, a sidewall insulating layer and a gate,wherein a slit extending from a surface of the stress film toward the sidewall insulating layer is formed in the stress film.

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