Insulated Gate Semiconductor Device and Method for Producing the Same
First Claim
1. An insulation gate type semiconductor device including a body region which is positioned on the upper surface inside a semiconductor substrate and is a first conductive type semiconductor;
- and a drift region which is in contact with the downward of the body region and is a second conductive type semiconductor;
comprising;
a first trench portion group passing through the body region in the thickness direction of the semiconductor substrate, positioned in a cell area, and internally incorporating a gate electrode;
first floating regions enclosed by the drift region and surrounding the bottom portion of at least one trench portion in the first trench portion group, which is the first conductive type semiconductor;
a second trench portion group passing through the body region in the thickness direction of the semiconductor substrate, positioned in the terminal area surrounding the cell area, and formed to be annular so as to surround the cell area when being viewed from above; and
second floating regions enclosed by the drift region and surrounding the bottom portion of at least one trench portion in the second trench portion group, which is the first conductive type semiconductor;
wherein the semiconductor device is adapted such that electric field strength peak at two places in the semiconductor substrate in a thickness direction;
at a PN unction between the first or second floating regions and the drift region; and
at a PN junction between the body region and the drift region; and
wherein a gate electrode is internally incorporated in at least the innermost positioned trench portion in the second trench portion group; and
wherein a lower end of the gate electrode in the second trench portion group is equal to a lower end of the gate electrode in the first trench group in a position in the substrate in the thickness direction.
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Accused Products
Abstract
The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.
78 Citations
12 Claims
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1. An insulation gate type semiconductor device including a body region which is positioned on the upper surface inside a semiconductor substrate and is a first conductive type semiconductor;
- and a drift region which is in contact with the downward of the body region and is a second conductive type semiconductor;
comprising;
a first trench portion group passing through the body region in the thickness direction of the semiconductor substrate, positioned in a cell area, and internally incorporating a gate electrode;
first floating regions enclosed by the drift region and surrounding the bottom portion of at least one trench portion in the first trench portion group, which is the first conductive type semiconductor;
a second trench portion group passing through the body region in the thickness direction of the semiconductor substrate, positioned in the terminal area surrounding the cell area, and formed to be annular so as to surround the cell area when being viewed from above; and
second floating regions enclosed by the drift region and surrounding the bottom portion of at least one trench portion in the second trench portion group, which is the first conductive type semiconductor;
wherein the semiconductor device is adapted such that electric field strength peak at two places in the semiconductor substrate in a thickness direction;
at a PN unction between the first or second floating regions and the drift region; and
at a PN junction between the body region and the drift region; and
wherein a gate electrode is internally incorporated in at least the innermost positioned trench portion in the second trench portion group; and
wherein a lower end of the gate electrode in the second trench portion group is equal to a lower end of the gate electrode in the first trench group in a position in the substrate in the thickness direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- and a drift region which is in contact with the downward of the body region and is a second conductive type semiconductor;
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9. A method for producing an insulation gate type semiconductor device including a body region which is positioned on the upper surface inside a semiconductor substrate and is a first conductive type semiconductor;
- and a drift region which is in contact with the downward of the body region and is a second conductive type semiconductor;
a floating region which is surrounded by the drift region and is a first conductive type semiconductor; and
a structure wherein electric field strength peak at two places in the semiconductor substrate in the thickness direction;
at a PN junction between the floating region and the drift floating region; and
at a PN junction between the body region and the drift region, comprising the steps of;
forming a mask pattern to form the first trench portion group positioned in the cell area and the second trench portion group, which is positioned in the terminal area surrounding the cell area and surrounds the first trench portion group;
forming trench portions to compose respective trench portions by etching on the basis of the mask pattern formed in the mask pattern forming step;
forming an oxide film on a wall surface of a trench portion formed in the trench portions forming step;
after forming the oxide film in the oxide film forming step, implanting impurities to form floating regions, which is the first conductive type semiconductor, by implanting impurities from the bottom parts of respective trench portions formed in the trench portion forming step;
forming a deposition insulation layer by depositing an insulation substance in respective trench portions formed in the trench portion forming step;
etching back to form an etching protection layer in which the upper part of at least the innermost positioned trench portion in the second trench portion group is open, and to remove a part of the deposition insulation layer formed in the deposition insulation layer forming step; and
forming a gate electrode in a space produced in respective trench portions in the etching-back step. - View Dependent Claims (10, 11, 12)
- and a drift region which is in contact with the downward of the body region and is a second conductive type semiconductor;
Specification