METHOD FOR MANUFACTURING DISPLAY DEVICE, AND ETCHING APPARATUS

• US 20080090341A1
• Filed: 10/11/2007
• Published: 04/17/2008
• Est. Priority Date: 10/12/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: TANAKA, Koichiro, MORISUE, Masafumi
• Granted Patent: US 7,968,453 B2
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/76817 using printing or stamping techniques
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is selectively removed to form an opening in the insulating layer. Therefore, the insulating layer provided with the opening is formed over a first conductive layer, and the first conductive layer below the insulating layer is exposed at the bottom of the opening. A second conductive layer is formed in the opening to be in contact with an exposed part of the first conductive layer, so that the first conductive layer and the second conductive layer are electrically connected in the opening provided in the insulating layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer;

forming an insulating layer over the first conductive layer;

arranging a tube to be in contact with the insulating layer;

forming an opening, which reaches the first conductive layer, in the insulating layer by supplying a treatment agent to the insulating layer through the tube; and

forming a second conductive Layer at least in the opening to be in contact with the first conductive layer.

2. The method for manufacturing the semiconductor device according to claim 1, wherein the second conductive layer is formed by discharging a composition including a conductive material through the tube.

3. The method for manufacturing the semiconductor device according to claim 1, wherein the treatment agent is sucked and removed through the tube after being discharged from the tube.

4. The method for manufacturing the semiconductor device according to claim 1, wherein the tube has a needle shape.

5. The method for manufacturing the semiconductor device according to claim 1, wherein the treatment agent is an etching gas or an etchant.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer;

forming a first insulating layer over the first conductive layer;

forming a second insulating layer over the first insulating layer;

sticking a tube into the second insulating layer to form a first opening;

forming a second opening, which reaches the first conductive layer, in the first insulating layer by supplying a treatment agent to the first insulating layer through the tube; and

forming a second conductive layer at least in the first opening and the second opening to be in contact with the first conductive layer.

7. The method for manufacturing the semiconductor device according to claim 6, wherein the second conductive layer is formed by discharging a composition including a conductive material through the tube.

8. The method for manufacturing the semiconductor device according to claim 6, wherein the treatment agent is sucked and removed through the tube after being discharged from the tube.

9. The method for manufacturing the semiconductor device according to claim 6, wherein the tube has a needle shape.

10. The method for manufacturing the semiconductor device according to claim 6, wherein the treatment agent is an etching gas or an etchant.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer;

forming a gate insulating layer adjacent to the gate electrode layer;

forming a semiconductor layer adjacent to the gate insulating layer;

forming a source electrode layer and a drain electrode layer adjacent to the semiconductor layer;

forming an insulating layer over the source electrode layer and the drain electrode layer;

arranging a tube to be in contact with the insulating Layer;

forming an opening, which reaches the source electrode layer or the drain electrode layer, in the insulating layer by supplying a treatment agent to the insulating layer through the tube; and

forming a pixel electrode layer at least in the opening to be in contact with the source electrode layer or the drain electrode layer.

12. The method for manufacturing the semiconductor device according to claim 11, wherein the treatment agent is sucked and removed through the tube after being discharged from the tube.

13. The method for manufacturing the semiconductor device according to claim 11, wherein the tube has a needle shape.

14. The method for manufacturing the semiconductor device according to claim 11, wherein the treatment agent is an etching gas or an etchant.

15. A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor layer including a source region and a drain region;

forming a gate insulating layer over the semiconductor layer;

forming a gate electrode layer over the gate insulating layer;

forming an insulating layer over the gate electrode layer;

forming a first opening in the insulating layer by using a first tube;

forming a second opening, which reaches the source region, in the insulating layer and the gate insulating layer by supplying a treatment agent to the insulating layer through the first tube;

forming a source electrode layer to be in contact with the source region at least in the first opening and the second opening;

forming a third opening in the insulating layer by using a second tube;

forming a fourth opening, which reaches the drain region, in the insulating layer and the gate insulating layer by supplying a treatment agent to the insulating layer through the second tube; and

forming a drain electrode layer to be in contact with the drain region at least in the third opening and the fourth opening.

16. The method for manufacturing the semiconductor device according to claim 15, wherein the treatment agent is sucked and removed through the first tube and the second tube after being discharged from the first tube and the second tube.

17. The method for manufacturing the semiconductor device according to claim 15, wherein each of the first tube and the second tube has a needle shape.

18. The method for manufacturing the semiconductor device according to claim 15, wherein the treatment agent is an etching gas or an etchant.

19. An etching apparatus comprising:

a narrow pipe having a hollow structure whose end opens;

a stage configured to hold a substrate;

a position control unit which moves the narrow pipe in a predetermined position on the substrate so that an end of the narrow pipe is in contact with a surface to be processed;

a material storing chamber which supplies a treatment agent to the narrow pipe; and

a discharge control unit which discharges the treatment agent from the narrow pipe.

20. The etching apparatus according to claim 19, further comprising a suction control unit which sucks the discharged treatment agent.

21. The etching apparatus according to claim 19, wherein the narrow pipe has a needle shape.