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Technique for Improved Damage Control in a Plasma Doping (PLAD) Ion Implantation

  • US 20080090392A1
  • Filed: 09/29/2006
  • Published: 04/17/2008
  • Est. Priority Date: 09/29/2006
  • Status: Abandoned Application
First Claim
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1. A method for improved damage control in a plasma doping (PLAD) ion implantation process, the method comprising:

  • placing a wafer on a platen in a chamber;

    generating a plasma in the chamber;

    implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0°

    C. during ion implantation.

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