Technique for Improved Damage Control in a Plasma Doping (PLAD) Ion Implantation

• US 20080090392A1
• Filed: 09/29/2006
• Published: 04/17/2008
• Est. Priority Date: 09/29/2006
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Singh, Vikram, Renau, Anthony, Arevalo, Edwin A.
• Application Number:
  US11/537,274
• Publication Number:
  US 20080090392A1
• Time in Patent Office: Days
• US Class Current: 438/514
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26593 at a temperature lower than room temperature

Abstract

A technique for improved damage control in plasma doping (PLAD) ion implantation is disclosed. According to a particular exemplary embodiment, the technique may be realized as a method for improved damage control in plasma doping (PLAD) ion implantation. The method may comprise placing a wafer on a platen in a chamber. The method may also comprise generating a plasma in the chamber. The method may additionally comprise implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0° C during ion implantation, and wherein a dose rate associated with the portion of ions is at least 1×10¹³ atoms/cm²/second.

Claims

1. A method for improved damage control in a plasma doping (PLAD) ion implantation process, the method comprising:

placing a wafer on a platen in a chamber;

generating a plasma in the chamber;

implanting at least a portion of ions produced from the plasma into the wafer, wherein the wafer is cooled to a temperature no higher than 0°

C. during ion implantation.

2. The method of claim 1, wherein a dose rate associated with the portion of ions is at least 1×

10¹³ atoms/cm²/second.

3. The method of claim 1, wherein the method reduces end-of-range defects, transient enhanced diffusion, and leakage current on the wafer.

4. The method of claim 2, wherein the method is for RF-PLAD.

5. The method of claim 1, wherein the wafer is cooled to a temperature of approximately −

20°

C. to −

40°

C. during ion implantation.

6. The method of claim 5, wherein cooling the wafer comprises pre-chilling the wafer before it is placed on the platen.

7. The method of claim 6, wherein the wafer is thermally insulated from the platen to minimize an increase in temperature.

8. The method of claim 5, wherein cooling the wafer comprises chilling the wafer with a cooling mechanism while the wafer is on a platen.

9. The method of claim 5, wherein cooling the wafer comprises pre-chilling the wafer before being placed on a platen and cooling the wafer with a cooling mechanism while the wafer is on a platen.

10. The method of claim 2, wherein increasing the dose rate of the at least a portion of ions comprises increasing the pulse rate of DC bias.

11. The method of claim 2, wherein the dose rate of the at least a portion of ions is increased approximately 10 to 50 fold.

12. The method of claim 11, wherein the dose rate of the at least a portion of ions is approximately 5×

10¹⁴ atoms/cm²/second.

13. The method of claim 12, wherein the dose rate of the implant comprises a dose per pulse of approximately 1×

10¹¹ at 5 kHz.