Gas distribution assembly for use in a semiconductor work piece processing reactor

• US 20080092815A1
• Filed: 11/20/2006
• Published: 04/24/2008
• Est. Priority Date: 10/18/2006
• Status: Active Grant

• Current Assignee: Advanced Micro-Fabrication Equipment Inc.
• Original Assignee: Advanced Micro-Fabrication Equipment Inc.
• Inventors: Yin, Gerald, Wang, Shulin, Ho, Henry, Lv, Qing, Fu, Li, Chen, AiHua
• Granted Patent: US 7,658,800 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Claims

1. A gas distribution assembly, comprising:

a reactant gas supply plate which is coupled in fluid flowing relation relative to at least first and second reactant gases;

at least one reactant gas distribution plate coupled in fluid receiving relation relative to the reactant gas supply plate for substantially evenly distributing at least one of the first and second reactant gases; and

a reactant gas delivery face plate coupled in fluid receiving relation relative to the reactant gas distribution plate, and wherein the first and second reactant gases remain separated as they pass through the reactant gas supply plate, gas distribution plate and gas delivery face plate and then further exit the reactant gas delivery face plate in a substantially evenly distributed fashion.

2. A gas distribution assembly as claimed in claim 1, and wherein the reactant gas supply plate has a top and a bottom surface, and wherein a first reactant gas passageway is disposed substantially centrally thereof, and extends between the top and bottom surfaces, and wherein a plurality of second reactant gas passageways are formed in the reactant gas supply plate, and extend between the top and bottom surfaces thereof, and wherein the first reactant gas is coupled in fluid flowing relation relative to the first reactant gas passageway, and the second reactant gas is coupled in fluid flowing relation relative to the plurality of second reactant gas passageways.

3. A gas distribution assembly as claimed in claim 2, and wherein a first plurality of radially extending gas channeling passageways are formed in the bottom surface of the reactant gas supply plate, and which are each coupled in fluid flowing relation relative to the first reactant gas passageway, and wherein the first and second reactant gases exiting the bottom surface of the reactant gas supply plate are separated one from the other.

4. A gas distribution assembly as claimed in claim 3, and wherein the reactant gas supply plate has a surface area, and an outside peripheral edge, and wherein the first plurality of radially extending gas channeling passageways extend radially outwardly toward the peripheral edge of the reactant gas supply plate, and the plurality of second reactant gas passageways are substantially evenly distributed over the remaining surface area of the reactant gas supply plate.

5. A gas distribution assembly as claimed in claim 2, and wherein the reactant gas distribution plate is located between the reactant gas supply plate, and the reactant gas delivery face plate, and wherein the reactant gas distribution plate has a top surface which is juxtaposed relative to the bottom surface of the reactant gas supply plate, and an opposite bottom surface which is juxtaposed relative to the reactant gas delivery plate, and wherein a plurality of gas channeling blocks are positioned in predetermined spaced relation on the top surface of the reactant gas distribution plate, and extend normally upwardly relative thereto, and wherein each of the gas channeling blocks have a third plurality of reactant gas passageways formed therein and which extend through the respective gas channeling blocks to the bottom surface of the reactant gas distribution plate, and wherein the third plurality of reactant gas passageways formed in the respective gas channeling blocks are individually coaxially aligned relative to each of the second plurality of reactant gas passageways which are formed in the reactant gas supply plate.

6. A gas distribution assembly as claimed in claim 5, and wherein the plurality of gas channeling blocks are spaced in a predetermined pattern so as to define a first plurality of major substantially radially extending reactant gas distribution passageways, and a circumscribing reactant gas distribution passageway which is coupled to the first plurality of major radially extending gas distribution passageways and which surrounds the plurality of gas channeling blocks, and wherein the plurality of gas channeling blocks further define a plurality of minor reactant gas distribution passageways therebetween the respective gas channeling blocks and which are coupled in fluid flowing relation relative to the first plurality of major radially extending reactant gas distribution passageways, and wherein a fourth plurality of reactant gas passageways are formed in the top surface of the reactant gas distribution plate, and are further located in predetermined substantially evenly distributed relation therealong the major, minor and circumscribing reactant gas distribution passageways and which further extend to the bottom surface of the reactant gas distribution plate, and wherein the first reactant gas which exits the reactant gas supply plate is substantially evenly distributed by the major, minor and circumscribing reactant gas distribution passageways over the top surface of the reactant gas distribution plate, and further enters into the fourth plurality of reactant gas distribution passageways and then exits the bottom surface to the reactant gas distribution plate, and wherein the first and second reactant gases remain separated as each of the reactant gases pass through the reactant gas distribution plate.

7. A gas distribution assembly as claimed in claim 2, and wherein the reactant gas delivery face plate has a top surface which is juxtaposed relative to the reactant gas distribution plate and which receives the first and second reactant gases which have passed through the reactant gas supply plate and the reactant gas distribution plate, and an opposite bottom surface which is disposed in spaced relation relative to a semiconductor work piece which is being processed, and wherein a plurality of gas distribution enclosures are mounted on the top surface and extend substantially normally upwardly thereof, and wherein the plurality of gas distribution enclosures are positioned in predetermined spaced relation, one relative to the others, and wherein a fifth plurality of gas passageways are formed in the top surface, and extend to the bottom surface thereof, and wherein the first reactant gas exiting the bottom surface of the reactant gas distribution plate enters the respective gas distribution enclosures and then passes out through the fifth plurality of gas passageways for delivery to the semiconductor work piece which is being processed, and wherein a sixth plurality of gas distribution passageways are defined therebetween the plurality of gas distribution enclosures and which receives the second reactant gas which is exiting the reactant gas distribution plate, and wherein the sixth plurality of gas passageways are formed in the top surface and extend to the bottom surface, and wherein the second reactant gas is substantially evenly distributed over the top surface of the reactant gas delivery face plate, and passes through the sixth plurality of gas passageways for delivery to the semiconductor work piece being processed.

8. A gas distribution assembly as claimed in claim 7, and wherein the fifth and sixth plurality of gas passageways exit the bottom surface of the reactant gas delivery face plate in an alternating, predetermined, spaced orientation so as to substantially evenly distribute the first and second reactant gases to the semiconductor work piece being processed.

9. A gas distribution assembly as claimed in claim 7, and wherein a plurality of gas distribution holes are formed in the reactant gas delivery face plate, and wherein the respective fifth and sixth gas passageways terminate at the plurality of gas distribution holes, and wherein the plurality of gas distribution holes has a center gas distribution hole which is substantially coaxially aligned relative to a center of the semiconductor work piece which is being processed.

10. A gas distribution assembly as claimed in claim 7, and wherein a plurality of gas distribution holes are formed in the reactant gas delivery face plate, and wherein the respective fifth and sixth gas passageways terminate at the plurality of gas distribution holes, and wherein the plurality of gas distribution holes has a center gas distribution hole which is positioned in laterally offset relation relative to a center of the semiconductor work piece which is being processed.

11. A gas distribution assembly as claimed in claim 1, and wherein the reactant gas supply plate, gas distribution plate and gas delivery face plate are mechanically coupled together.

12. A gas distribution assembly as claimed in claim 1, and wherein the reactant gas supply plate, gas distribution plate and gas delivery face plate are brazed or fused into a unitary gas distribution assembly.

13. A gas distribution assembly, comprising:

a reactant gas supply plate coupled in fluid flowing relation relative to at least a first and second reactant gas supply, and wherein the reactant gas supply plate has a top and a bottom surface, and wherein a first reactant gas passageway is formed substantially centrally thereof and extends between the top and bottom surfaces, and wherein the first reactant gas is coupled in fluid flowing relation relative to the first reactant gas passageway, and further exits the bottom surface thereof, and wherein a plurality of second reactant gas passageways are formed in the top surface and extend to the bottom surface thereof, and wherein the plurality of second reactant gas passageways are distributed in a first plurality of predetermined, spaced zones about the top surface thereof;

a reactant gas distribution plate having a top surface which is juxtaposed relative to the bottom surface of the reactant gas supply plate, and an opposite bottom surface, and wherein the top surface of the reactant gas distribution plate has a plurality of spaced gas channeling blocks which are arranged in a second plurality of zones that are individually substantially aligned with the first plurality of zones formed in the reactant gas supply plate, and wherein a third plurality of reactant gas passageways are formed in the respective gas channeling blocks and extend to the bottom surface of the reactant gas distribution plate, and wherein the third plurality of reactant gas passageways are individually coupled in fluid flowing relation relative to each of the respective second reactant gas passageways formed in the reactant gas supply plate, and wherein the second reactant gas flows through the third plurality of reactant gas passageways, and wherein a fourth plurality of reactant gas passageways extend between the top and bottom surface of the reactant gas distribution plate and are coupled in fluid flowing relation relative to the first reactant gas and which flows therethrough; and

a reactant gas delivery face plate having a top surface which is juxtaposed relative to the bottom surface of the reactant gas distribution plate, and an opposite bottom surface, and wherein a plurality of spaced gas enclosures are mounted on the top surface, and wherein a fifth plurality of reactant gas passageways are formed in the top surface of the reactant delivery face plate and are located within the respective gas enclosures, and which further extend to the bottom surface, thereof, and wherein the first reactant gas flows therethrough, and wherein a sixth plurality of reactant gas passageways are formed in the top surface of the reactant gas delivery face plate and are located between the plurality of gas enclosures, and which extend to the bottom surface thereof, and wherein the second reactant gas flows therethrough, and wherein the first and second reactant gases exit the bottom surface of the reactant delivery face plate in a substantially equally distributed fashion.

14. A gas distribution assembly as claimed in claim 13, and wherein the first and second reactant gases remain substantially separated as they pass through the reactant gas supply plate, reactant gas distribution plate, and the reactant gas delivery face plate.

15. A gas distribution assembly as claimed in claim 13, and wherein a plurality of radially extending gas channeling passageways are formed in the bottom surface of the reactant gas supply plate, and are further located between the first plurality of predetermined spaced zones, and wherein the first reactant gas passageway carrying the first reactant gas is coupled in fluid flowing relation relative to the plurality of radially extending gas channeling passageways.

16. A gas distribution assembly as claimed in claim 15, and wherein a plurality of major radially extending reactant gas distribution passageways are defined between the second plurality of zones as defined in the top surface of the reactant gas distribution plate, and wherein a plurality of minor reactant gas distribution passageways are defined between the respective gas channeling blocks, and wherein a circumscribing reactant gas distribution passageway is formed in the top surface of the reactant gas distribution plate, and which further surrounds the second plurality of zones as defined by the plurality of gas channeling blocks, and is further coupled in fluid flowing relation relative to the major radially extending reactant gas distribution passageways, and wherein the respective major radially extending reactant gas distribution passageways are substantially coaxially aligned relative to the individual radially extending gas channeling passageways formed in the bottom surface of the reactant gas supply plate, and wherein the first reactant gas exits the reactant gas supply plate and travels along the major and minor gas distribution passageways, and the circumscribing gas distribution passageway, and wherein the fourth plurality of gas passageways are located in predetermined spaced relation therealong the major and minor reactant gas distribution passageways, and circumscribing reactant gas distribution passageway, and wherein the first reactant gas exits the reactant gas distribution plate by way of the fourth plurality of gas passageways.

17. A gas distribution assembly as claimed in claim 13, and wherein the first and second reactant gases react following their exit from the bottom surface of the reactant gas delivery face plate, and are then delivered to a semiconductor work piece which is being processed.

18. A gas distribution assembly, comprising:

a first, second and third gas distribution plate which are joined together, and wherein the second gas distribution plate is located between the first and third gas distribution plates, and wherein a first cavity is defined between the first and second gas distribution plates, and a second cavity is defined between the second and third gas distribution plates, and wherein a plurality of reactant gases are coupled in fluid flowing relation relative to the respective gas distribution plates;

a plurality of first gas partition means for receiving and channeling a first reactant gas, and which is made integral with and extends upwardly from the second gas distribution plate, and wherein the respective first gas partition means are further located in predetermined spaced relation one relative to the others, and wherein the plurality of first gas partition means are further disposed in juxtaposed relation relative to the first gas distribution plate and are located within the first cavity;

a plurality of first reactant gas passageways which are defined, at least in part, by the plurality of first gas partition means and which extend through the second gas distribution plate, and which receives and channels the first reactant gas;

a plurality of second reactant gas passageways defined by the second gas distribution plate, and which extend therethrough, and which are further substantially evenly distributed around the first gas partition means, and which receives and channels a second reactant gas;

a plurality of second gas partition means for receiving and channeling the second reactant gas and which is made integral with and extends upwardly from the third gas distribution plate, and wherein the respective second gas partition means are located in predetermined spaced relation one relative to the others, and wherein the second gas partition means are further disposed in juxtaposed relation relative to the second gas distribution plate, and further are located within the second cavity;

a plurality of third reactant gas passageways which are defined, at least in part, by the plurality of second gas partition means and which extend through the third gas distribution plate, and which receives and channels the second reactant gas;

a plurality of fourth reactant gas passageways which are defined by the third gas distribution plate and which extend therethrough, and which are further substantially evenly distributed around the plurality of second gas partition means, and which receives and channels the first reactant gas, and wherein first and second reactant gas pathways are defined by the first, second, third and fourth reactant gas passageways, and wherein a first and a second reactant gas moves along the first and second reactant gas pathways and remain separated, one from the other, until they exit the third gas distribution plate.

19. A semiconductor work piece processing reactor, comprising:

a processing chamber defining a deposition region;

a moveable pedestal which supports and horizontally moves a semiconductor work piece to be processed within the deposition region of the processing chamber while in processing; and

a gas distribution assembly mounted within the processing chamber and adjacent to the semiconductor work piece, and wherein the gas distribution assembly has multiple reactant gas distribution plates, and wherein the respective reactant gas distribution plates define a plurality of reactant gas passageways which are coupled together in predetermined fluid flowing relation so as to provide at least first and second reactant gas pathways which are separated from each other, and which deliver at least two reactant gases to the moveable semiconductor work piece.

20. A semiconductor work piece processing reactor as claimed in claim 19, and wherein the multiple reactant gas distribution plates comprise a first reactant gas supply plate;

a second reactant gas distribution plate; and

a third reactant gas delivery face plate.

21. A semiconductor work piece processing reactor as claimed in claim 20, and further comprising:

a first reactant gas partition means for receiving a first reactant gas, and which is made integral with the second reactant gas distribution plate, and wherein the plurality of reactant gas passageways include a plurality of first reactant gas passageways which are defined by the first reactant gas partition means, and a plurality of second reactant gas passageways which are defined by the second reactant gas distribution plate, and which are substantially evenly distributed around the first reactant gas partition means; and

a second reactant gas partition means for receiving a second reactant gas, and which is made integral with the third gas distribution plate, and wherein the plurality of reactant gas passageways include a plurality of third reactant gas passageways which are defined by the second reactant gas partition means, and a plurality of fourth reactant gas passageway which are defined by the third reactant gas distribution plate and which are substantially evenly distributed around the second reactant gas distribution means, and wherein the plurality of first, second third, and fourth reactant gas passageways define, at least in part, a first and second gas pathway for receiving and delivering the first and second reactant gases to the semiconductor work piece being processed within the deposition region of the processing chamber.