Semiconductor structure and process for forming ohmic connections to a semiconductor structure
First Claim
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1. A semiconductor apparatus comprising:
- a first doped volume of semiconductor material, said first doped volume having a front surface and first and second adjacent regions;
said first region having a first concentration of dopant and a first exposed area on said front surface;
said second region having a second concentration of dopant and a second exposed area on said front surface, said second concentration being higher than said first concentration; and
a first external conductor; and
an alloy bonding said first external conductor to said second exposed area to ohmically connect said conductor to said second region.
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Abstract
A semiconductor apparatus is disclosed. The apparatus includes a first doped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions. The first region has a first concentration of dopant and a first exposed area on the front surface. The second region has a second concentration of dopant and a second exposed area on the front surface, the second concentration being higher than the first concentration. The apparatus also includes a first external conductor and an alloy bonding the first external conductor to the second exposed area to ohmically connect the conductor to the second region.
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Citations
81 Claims
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1. A semiconductor apparatus comprising:
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a first doped volume of semiconductor material, said first doped volume having a front surface and first and second adjacent regions; said first region having a first concentration of dopant and a first exposed area on said front surface; said second region having a second concentration of dopant and a second exposed area on said front surface, said second concentration being higher than said first concentration; and a first external conductor; and an alloy bonding said first external conductor to said second exposed area to ohmically connect said conductor to said second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A semiconductor apparatus comprising:
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a first doped volume of semiconductor material, said first doped volume having a front surface and first and second adjacent regions; said first region having a first concentration of dopant and a first exposed area on said front surface; said second region having a second concentration of dopant and a second exposed area on said front surface, said second concentration being higher than said first concentration; and a first external conductor; and first means for bonding said first external conductor to said second exposed area to ohmically connect said first conductor to said second region. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
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56. A process for making an electrical connection to a semiconductor structure comprising a first doped volume of semiconductor material, said first doped volume having a front surface and first and second adjacent regions, said first region having a first concentration of dopant and a first exposed area on said front surface, said second region having a second concentration of dopant and a second exposed area on said front surface, said second concentration being higher than said first concentration, the process comprising:
bonding a first external conductor to said second exposed area to ohmically connect said first conductor to said second region. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
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70. In a semiconductor structure having a first doped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions, the first region having a first concentration of dopant and a first exposed area on the front surface, the second region having a second concentration of dopant and a second exposed area on the front surface, the second concentration being higher than the first concentration, a process for forming electrical connections to the semiconductor structure comprises:
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cleaning the second exposed area on the front surface of the semiconductor material; pressing a first external conductor coated with an alloy into contact with the second exposed area, while heating said alloy to a temperature sufficient to at least partially melt said alloy; and maintaining said pressing while cooling said alloy to cause said alloy to solidify, thereby bonding said first conductor to said second exposed area such that said first conductor is in ohmic contact with said second region. - View Dependent Claims (71, 72, 73, 75, 76, 77, 78, 79, 80, 81)
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74. The process of clam 39 wherein heating comprises heating the structure to cause said alloy to be heated to a temperature of between about 60 degrees Celsius and about 150 degrees Celsius.
Specification