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Semiconductor structure and process for forming ohmic connections to a semiconductor structure

  • US 20080092944A1
  • Filed: 10/16/2006
  • Published: 04/24/2008
  • Est. Priority Date: 10/16/2006
  • Status: Abandoned Application
First Claim
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1. A semiconductor apparatus comprising:

  • a first doped volume of semiconductor material, said first doped volume having a front surface and first and second adjacent regions;

    said first region having a first concentration of dopant and a first exposed area on said front surface;

    said second region having a second concentration of dopant and a second exposed area on said front surface, said second concentration being higher than said first concentration; and

    a first external conductor; and

    an alloy bonding said first external conductor to said second exposed area to ohmically connect said conductor to said second region.

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