SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE

• US 20080093718A1
• Filed: 12/18/2007
• Published: 04/24/2008
• Est. Priority Date: 01/10/2005
• Status: Abandoned Application

• Current Assignee: HVVi Semiconductors Incorporated
• Original Assignee: HVVi Semiconductors Incorporated
• Inventors: Pavio, Jeanne
• Application Number:
  US11/958,889
• Publication Number:
  US 20080093718A1
• Time in Patent Office: Days
• US Class Current: 257/675
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/047 the other leads being parallel to the base
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/3737 Organic materials with or without a thermoconductive filler
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/166 : Material
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: Y10T 29/49121 : Beam lead frame or beam lead device

Abstract

A semiconductor component having a semiconductor chip mounted on a packaging substrate and a method for manufacturing the semiconductor component that uses batch processing steps for fabricating the packaging substrate. A heatsink is formed using an injection molding process. The heatsink has a front surface for mating with a semiconductor chip and a leadframe assembly. The heatsink also has a back surface from which a plurality of fins extend. The leadframe assembly includes a leadframe having leadframe leads extending from opposing sides of the leadframe to a central area of the leadframe. A liquid crystal polymer is disposed in a ring-shaped pattern on the leadframe leads. The liquid crystal polymer is partially cured. The leadframe assembly is mounted on the front surface of the heatsink and the liquid crystal polymer is further cured to form a packaging assembly, which is then singulated into packaging substrates.

Claims

1. A method for manufacturing a semiconductor component, comprising the steps of:

providing a heatsink having first and second major surfaces;

providing a leadframe having at least one leadframe lead;

disposing a liquid crystal polymer on a portion of the at least one leadframe lead;

partially curing the liquid crystal polymer; and

mating the liquid crystal polymer and the heatsink.

2. The method of claim 1, wherein the step of providing the heatsink includes providing the heatsink with a platform that serves as a die receiving area.

3. The method of claim 2, wherein the step of providing the heatsink includes contemporaneously forming the heatsink and the platform using an injection molding process.

4. The method of claim 1, wherein providing the heatsink includes forming at least one fin extending from the second major surface of the heatsink.

5. The method of claim 4, wherein the step of forming the at least one fin includes forming the at least one fin to have a quadrilateral shape.

6. The method of claim 5, wherein forming the at least one fin comprises forming at least three fins, wherein each of the at least three fins has a quadrilateral shape and are substantially parallel to each other.

7. The method of claim 6, wherein forming the at least one fin includes forming the at least one fin to have a pyramidal shape.

8. The method of claim 1, further including the step of further curing the liquid crystal polymer after mating the liquid crystal polymer and the heatsink.

9. The method of claim 8, wherein the step of disposing the liquid crystal polymer on the portion of the at least one leadframe lead includes dispensing the liquid crystal polymer on the at least one portion of the leadframe lead.

10. The method of claim 8, wherein the step of further curing the liquid crystal polymer includes fully curing the liquid crystal polymer.

11. The method of claim 8, wherein the step of providing the heatsink includes forming the heatsink using an injection molding process.

12. The method of claim 8, wherein the step of providing a leadframe having at least one leadframe lead includes providing a leadframe having first and second opposing sides spaced apart from each other by a central area, wherein a first leadframe lead extends from the first side into the central area and a second leadframe lead extends from the second side into the central area.

13. The method of claim 12, wherein the step of disposing the liquid crystal polymer includes disposing the liquid crystal polymer in a ring-shaped pattern having first and second opposing sides and third and fourth opposing sides, and wherein the first side of the ring-shaped pattern is disposed on the first leadframe lead and the second side of the ring-shaped pattern is disposed on the second leadframe lead.

14. The method of claim 13, wherein the first side of the ring-shaped pattern is disposed on a central portion of the first leadframe lead and the second side of the ring-shaped pattern is disposed adjacent an end of the ring-shaped pattern.

15. The method of claim 8, wherein the step of providing a leadframe having at least one leadframe lead includes providing a leadframe having first and second opposing sides spaced apart from each other by a central area, wherein a plurality of leadframe leads extends from the first side into the central area and a plurality of lead extends from the second side into the central area.

16. The method of claim 15, wherein the step of disposing the liquid crystal polymer includes disposing the liquid crystal polymer in a ring-shaped pattern having first and second opposing sides and third and fourth opposing sides, and wherein the first side of the ring-shaped pattern is disposed on the plurality of leadframe leads extending from the first side of the leadframe and the second side of the ring-shaped pattern is disposed on the plurality of leadframe leads extending from the second side of the leadframe.

17. The method of claim 16, wherein the step of providing a leadframe having at least one leadframe lead includes providing the leadframe having third and fourth opposing sides spaced apart from each other by the central area, wherein a plurality of leadframe leads extends from the third side into the central area and a plurality of leadframe leads extends from the fourth side into the central area, and wherein the step of disposing the liquid crystal polymer includes disposing the third side of the ring-shaped pattern on the plurality of leadframe leads extending from the third side and disposing the fourth side of the ring-shaped pattern on the plurality of leadframe leads extending from the fourth side.

18. The method of claim 8, further including the steps of:

providing a semiconductor chip having first and second major surfaces, wherein a gate structure is formed over the first major surface; and

coupling the first major surface of the semiconductor chip with the first major surface of the heatsink.

19. The method of claim 18, wherein the step of providing the semiconductor chip includes forming a metallization system on the first major surface of the semiconductor chip and wherein the step of coupling the first major surface of the semiconductor chip with the first major surface of the heatsink comprises soldering the semiconductor chip to the first major surface of the heatsink.

20. The method of claim 19, wherein the metallization system comprises one of a tin-nickel-gold metallization system or a tin-nickel-silver metallization system.

21. The method of claim 18, further including coupling a metal clip to the second side of the semiconductor chip and to a first leadframe lead of the plurality of leadframe leads.

22. The method of claim 21, further including the step of placing a lid over the semiconductor chip, wherein a portion of the lid is coupled to the metal clip.

23. The method of claim 21, wherein the step of providing the semiconductor chip includes forming a metallization system on the second major surface of the semiconductor chip and soldering the metal clip to the metallization system on the second major surface of the semiconductor chip.

24. The method of claim 23, wherein the metallization system on the second major surface of the semiconductor chip comprises aluminum with a nickel-gold alloy disposed thereon.

25. The method of claim 18, further including electrically coupling the gate structure to a second leadframe lead of the plurality of leadframe leads.

26. The method of claim 25, further including the step of soldering the lid to the semiconductor chip.

27. The method of claim 8, further including the step of coupling at least one other semiconductor chip to the heatsink.

28. The method of claim 27, wherein the step of coupling the at least one other semiconductor chip to the heatsink includes coupling a switching chip to the heatsink and coupling a mixed signal integrated circuit to the heatsink.

29. A method for manufacturing a semiconductor component, comprising the steps of:

forming a plurality of heatsinks, each heatsink of the plurality of heatsinks having first and second major surfaces;

providing a leadframe having a plurality of leadframe leads;

disposing a liquid crystal polymer on the plurality of leadframe leads;

partially curing the liquid crystal polymer;

coupling the leadframe to the plurality of heatsinks through the partially cured liquid crystal polymer to form a packaging frame comprising a plurality of packaging substrates; and

singulating the packaging frame to separate the plurality of packaging substrates from each other.

30. The method of claim 29, wherein the step of forming the heatsink comprises using an injection molding process.

31. The method of claim 30, wherein the step of forming the heatsink comprises forming the heatsink having a quadrilateral shape.

32. The method of claim 30, wherein the step of disposing the liquid crystal polymer on the plurality of leadframe leads comprises disposing the liquid crystal polymer in a quadrilateral ring-shaped pattern.

33. The method of claim 29, further including the step of further curing the liquid crystal polymer.

34. The method of claim 33, further including coupling a semiconductor chip to the heatsink, electrically coupling the semiconductor chip to at least one leadframe lead of the plurality of leadframe leads, and disposing a glob top material over the semiconductor chip.

35. A method for manufacturing a semiconductor component, comprising the steps of:

providing a heatsink having first and second major surfaces;

providing a ball grid array substrate having a first major surface and a second major surface, the second major surface having solder balls coupled thereto;

disposing a liquid crystal polymer on a portion of the first major surface of the ball grid array substrate;

partially curing the liquid crystal polymer;

mating a first major surface of a semiconductor chip to the liquid crystal polymer; and

mating a second major surface of the semiconductor chip to the heatsink.

36. The method of claim 35, wherein providing the heatsink includes providing fins extending from the second major surface of the heatsink.

37. The method of claim 36, wherein partially curing the liquid crystal polymer includes partially curing the liquid crystal polymer at a temperature ranging from about 260°

C. to about 280°

C. for a time ranging from about 20 minutes to about 60 minutes.

38. The method of claim 37, further including curing the liquid crystal polymer after the step of mating the first major surface of a semiconductor chip to the liquid crystal polymer.

39. A semiconductor component, comprising:

a heatsink having first and second major surfaces;

a liquid crystal polymer disposed on the first major surface of the heatsink, the liquid crystal polymer having a first side;

first and second leadframe leads disposed on first and second portions of the liquid crystal polymer, respectively;

a semiconductor chip having an active surface and a back surface, the active surface coupled to the heatsink;

an interconnect coupling the semiconductor chip to the first leadframe lead; and

a clip coupling the back surface to the second leadframe lead.

40. The semiconductor component of claim 39, wherein a portion of the first leadframe lead extends beyond the first side of the liquid crystal polymer.

41. The semiconductor component of claim 40, wherein the liquid crystal polymer forms a ring-shaped pattern on the first major surface of the heatsink, the ring-shaped pattern comprising first, second, third, and fourth sides, wherein the first and second sides are opposite each other and the third and fourth sides are opposite each other, and wherein the first side includes the first portion of the liquid crystal polymer and the second side includes the second portion of the liquid crystal polymer.

42. The semiconductor component of claim 41, further including a lid coupled to the first and second leadframe leads through an electrically insulating material.

43. The semiconductor component of claim 42, wherein the lid contacts the clip.

44. The semiconductor component of claim 43, further including at least one fin extending from the second major surface of the heatsink.