Semiconductor arrangement, semiconductor module, and method for connecting a semiconductor chip to a ceramic substrate

• US 20080093729A1
• Filed: 10/20/2006
• Published: 04/24/2008
• Est. Priority Date: 10/20/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Bayerer, Reinhold, Siepe, Dirk
• Granted Patent: US 8,164,176 B2
• Time in Patent Office: Days
• US Class Current: 257/703
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05172 Vanadium [V] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48491 being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48766 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48866 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78313 : Wedge
• CPC Class Codes: H01L 2224/82105 : by using a preform
• CPC Class Codes: H01L 2224/82106 : by subtractive methods
• CPC Class Codes: H01L 2224/83205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8383 : Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/8384 : Sintering
• CPC Class Codes: H01L 2224/8501 : Cleaning, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 23/3735 : Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01002 : Helium [He]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor arrangement has a silicon body with a first surface and a second surface and a thick metal layer arranged on at least one surface of the silicon body. The thickness of the thick metal-layer is at least 10 micrometers (μm).

Claims

1. A semiconductor arrangement comprising:

a silicon body having a first surface and a second surface and

a thick metal layer arranged on at least one surface of said silicon body, wherein the thickness of said thick metal-layer is at least 10 micrometers (μ

m).

2. The arrangement according to claim 1, further comprising a thin electrically conductive adhesion layer deposited on at least one of said surfaces of said silicon body.

3. The arrangement according to claim 1, further comprising a barrier-layer between said thick metal-layer and said silicon body for inhibiting diffusion of metal from said thick metal layer into said silicon body.

4. The arrangement according to claim 3, wherein the total thickness of said thick metal-layer is 20 micrometers (μ

m).

5. The arrangement according to claim 2, wherein the total thickness of said adhesion-layer and said barrier-layer is equal or less than 1 micrometers (μ

m).

6. The arrangement according to claim 1, wherein the thick metal-layer has an electrical conductivity of at least 4.4·

10⁷ ohm meters (Ω

m).

7. The arrangement according to claim 1, wherein the thick metal-layer has a thermal conductivity of at least 300 watts per kelvin per meter (W m⁻

1 K<sup>−

1</sup>).

8. The arrangement according to claim 1, wherein said thick metal-layer comprises copper or a copper-alloy.

9. The arrangement according to claim 1, wherein the ratio of the total thickness of said thick metal-layer and the thickness of said silicon body is between 0.1 and 1.

10. A semiconductor module comprising:

a ceramic substrate with a first and a second surface, said substrate having a thick metalization made of copper or its alloys at least at one of said surfaces;

a semiconductor chip comprising a silicon body having a first surface and a second surface, a thin adhesion layer deposited on at least one of said surfaces of said silicon body, and

a thick metal layer deposited on said thin layer for bonding thick bonding wires onto said thick metal layer, said semiconductor chip being arranged on said substrate; and

a copper-wire-bond connecting said thick metal layer of said semiconductor chip with said thick metal plating of said ceramic substrate.

11. The semiconductor module according to claim 10, wherein the thickness of said ceramic substrate between 0.1 millimeters (mm) and 0.3 millimeters (mm).

12. The semiconductor module according to claim 10, wherein the total thickness said metal plating is at least 0.4 millimeters (mm).

13. The semiconductor module according to claim 10, wherein the ceramic substrate is made of a material of high mechanical strength.

14. The semiconductor module according to claim 10, wherein the ceramic substrate is made of Al₂O₃ with Zr-, Y-, Er- Nb-, or Nd-additives or made of Si₃N₄.

15. The semiconductor module according to claim 10, further comprising

a plurality of ceramic substrates and semiconductor chips arranged on said substrates;

and

a base plate for haltering said plurality of ceramic substrates in one single semiconductor module,

wherein said plurality of ceramic substrates is arranged on said base plate.

16. The semiconductor module according to claim 15, wherein said base plate is made of copper, copper alloy, or of metal-matrix-composite.

17. The semiconductor module according to claim 15, further comprising a heat sink, wherein said ceramic substrate is arranged on said heat sink.

18. The semiconductor module according to claim 15, further comprising a heat sink which is the bottom of a plastic case covering said ceramic substrate.

19. A method for connecting a thick metal layer on a semiconductor chip to a thick metal plating made of copper or its alloys on a ceramic substrate, comprising the step of

bonding thick copper wires or ribbons to the thick metal layer and the thick metal plating using a bonding tool with a micro porous coating.

20. A method for connecting a thick metal layer on a semiconductor chip to a thick metal plating made of copper or its alloys on a ceramic substrate, comprising the step of

bonding thick copper wires or ribbons to the thick metal layer and the thick metal plating using a bonding tool with a protrusion structure or waffle structure.

21. A method of using a metal layer in a semiconductor arrangement comprising the step of:

providing a silicon body having a first surface and a second surface and

arranging a thick metal layer on at least one surface of said silicon body, wherein the thickness of said thick metal-layer is at least 10 micrometers (μ

m).