Solid-state image capturing device, method for driving the solid-state image capturing device, and electronic information device

• US 20080094495A1
• Filed: 10/19/2007
• Published: 04/24/2008
• Est. Priority Date: 10/19/2006
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ozumi, Takehiko, Shikata, Akinori
• Application Number:
  US11/975,410
• Publication Number:
  US 20080094495A1
• Time in Patent Office: Days
• US Class Current: 348/314
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/41 Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
• CPC Class Codes: H04N 25/42 by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/713 Transfer or readout registers; Split readout registers or multiple readout registers
• CPC Class Codes: H04N 25/73 using interline transfer [IT]

Abstract

A solid-state image capturing device according to the present invention includes: a plurality of light receiving sections, arranged in a matrix in an image capturing region, for photoelectrically converting received light into signal electrical charges; signal readout sections for reading out the signal electrical charges from the light receiving sections; vertical transfer sections driven by n-phase drive (n≧2, k is an integer greater than or equal to 2) in order to transfer the signal electrical charges, which have been read out from the light receiving sections in a column direction, in a vertical direction, wherein first-layer electrodes and second-layer electrodes are arranged in an alternating manner, and n electrodes make up one set of electrodes; a horizontal transfer section for transferring the signal electrical charges, which have been transferred from the vertical transfer sections, in a horizontal direction, wherein the vertical transfer sections include first vertical transfer sections for transferring the signal electrical charges, which have been read out from the light receiving sections, in one direction or in an other direction and second vertical transfer sections for transferring the signal electrical charges in the one direction or the other direction with timings independent of those for the first vertical transfer sections.

Claims

1. A solid-state image capturing device, comprising:

a plurality of light receiving sections, arranged in a matrix in an image capturing region, for photoelectrically converting received light into signal electrical charges;

signal readout sections for reading out the signal electrical charges from the light receiving sections;

vertical transfer sections driven by n-phase drive (n≧

2, k is an integer greater than or equal to

     2) in order to transfer the signal electrical charges, which have been read out from the light receiving sections in a column direction, in a vertical direction, wherein first-layer electrodes and second-layer electrodes are arranged in an alternating manner, and n electrodes make up one set of electrodes;

a horizontal transfer section for transferring the signal electrical charges, which have been transferred from the vertical transfer sections, in a horizontal direction,

wherein

the vertical transfer sections include first vertical transfer sections for transferring the signal electrical charges, which have been read out from the light receiving sections, in one direction or in an other direction and second vertical transfer sections for transferring the signal electrical charges in the one direction or the other direction with timings independent of those for the first vertical transfer sections.

2. A solid-state image capturing device according to claim 1, wherein a plurality of columns of light receiving sections having signal electrical charges to be read out to the first vertical transfer sections and a plurality of columns of light receiving sections having signal electrical charges to be read out to the second vertical transfer sections are arranged, and a direction for transferring the signal electrical charges is controlled in each group of columns.

3. A solid-state image capturing device according to claim 1, wherein the first vertical transfer sections and the second vertical transfer sections are arranged in each column in an alternating manner.

4. A solid-state image capturing device according to claim 2, wherein the first vertical transfer sections and the second vertical transfer sections are arranged in each column in an alternating manner.

5. A solid-state image capturing device according to claim 1, wherein the first vertical transfer sections and the second vertical transfer sections are arranged in every plurality of columns in an alternating manner.

6. A solid-state image capturing device according to claim 2, wherein the first vertical transfer sections and the second vertical transfer sections are arranged in every plurality of columns in an alternating manner.

7. A solid-state image capturing device according to claim 1, wherein the second-layer electrodes include first patterns for driving the first vertical transfer sections and second patterns for driving the second vertical transfer sections, and transfer control signals independent of each other are applied to the first patterns and the second patterns, respectively.

8. A solid-state image capturing device according to claim 1, wherein patterns of the first-layer electrodes are the same in a column direction, and first patterns and second patterns of the second-layer electrodes are different at the first vertical transfer sections and the second vertical transfer sections, respectively.

9. A solid-state image capturing device according to claim 7, wherein patterns of the first-layer electrodes are the same in a column direction, and first patterns and second patterns of the second-layer electrodes are different at the first vertical transfer sections and the second vertical transfer sections, respectively.

10. A solid-state image capturing device according to claim 1, wherein each of the first-layer electrodes is substantially strip-shaped and extends in a horizontal direction between adjacent light receiving sections of the plurality of light receiving sections, the first-layer electrode has patterns having a branched projection which extends in one of one direction and an other direction at each of the first vertical transfer sections and having a branched projection which extends in the other of the one direction and the other direction at each of the second vertical transfer sections,

each of the second-layer electrodes is substantially strip-shaped and extends in the horizontal direction between adjacent light receiving sections of the plurality of light receiving sections, the second-layer electrode includes a first pattern which extends in the other of the one direction and the other direction at the first vertical transfer section and which partially overlaps each of the branched projections of the first-layer electrode, and a second pattern which extends in the one of the one direction and the other direction at the second vertical transfer section and which partially overlaps each of the branched projections of the first-layer electrode.

11. A solid-state image capturing device according to claim 7, wherein each of the first-layer electrodes is substantially strip-shaped and extends in a horizontal direction between adjacent light receiving sections of the plurality of light receiving sections, the first-layer electrode has patterns having a branched projection which extends in one of one direction and an other direction at each of the first vertical transfer sections and having a branched projection which extends in the other of the one direction and the other direction at each of the second vertical transfer sections,

each of the second-layer electrodes is substantially strip-shaped and extends in the horizontal direction between adjacent light receiving sections of the plurality of light receiving sections, the second-layer electrode includes a first pattern which extends in the other of the one direction and the other direction at the first vertical transfer section and which partially overlaps each of the branched projections of the first-layer electrode, and a second pattern which extends in the one of the one direction and the other direction at the second vertical transfer section and which partially overlaps each of the branched projections of the first-layer electrode.

12. A solid-state image capturing device according to claim 7, wherein the first pattern is structured such that the width thereof is significantly narrower at the second vertical transfer section than at the first vertical transfer section so as not to influence a transfer of the signal electrical charges from the second vertical transfer section, and the second pattern is structured such that the width thereof is significantly narrower at the first vertical transfer section than at the second vertical transfer section so as not to influence a transfer of the signal electrical charges from the first vertical transfer section.

13. A solid-state image capturing device according to claim 8, wherein the first pattern is structured such that the width thereof is significantly narrower at the second vertical transfer section than at the first vertical transfer section so as not to influence a transfer of the signal electrical charges from the second vertical transfer section, and the second pattern is structured such that the width thereof is significantly narrower at the first vertical transfer section than at the second vertical transfer section so as not to influence a transfer of the signal electrical charges from the first vertical transfer section.

14. A solid-state image capturing device according to claim 10, wherein the first pattern is structured such that the width thereof is significantly narrower at the second vertical transfer section than at the first vertical transfer section so as not to influence a transfer of the signal electrical charges from the second vertical transfer section, and the second pattern is structured such that the width thereof is significantly narrower at the first vertical transfer section than at the second vertical transfer section so as not to influence a transfer of the signal electrical charges from the first vertical transfer section.

15. A solid-state image capturing device according to claim 1, further comprising:

a plurality of first signal readout sections, connected to the second-layer electrodes, for reading out the signal electrical charges from the light receiving sections in a first group of columns to the first vertical transfer sections; and

a plurality of second signal readout sections, connected to the second-layer electrodes, for reading out the signal electrical charges from the light receiving sections in a second group of columns other than the first group of columns to the second vertical transfer sections,

wherein

control signals independent of each other are applied to the signal readout sections, respectively, and a readout of the signal electrical charges from the plurality of light receiving sections to the vertical transfer sections is controlled in each group of columns.

16. A solid-state image capturing device according to claim 1, wherein the horizontal transfer section is arranged at one or both of one end and an other end of the image capturing region.

17. A solid-state image capturing device according to claim 1, wherein first-layer electrodes and second layer electrodes are repeatedly arranged in the horizontal transfer section.

18. A solid-state image capturing device according to claim 16, wherein first-layer electrodes and second layer electrodes are repeatedly arranged in the horizontal transfer section.

19. A solid-state image capturing device according to claim 1, wherein the first vertical transfer section and the second vertical transfer section each are arranged in each column in accordance with functions of the light receiving sections.

20. A solid-state image capturing device according to claim 2, wherein the first vertical transfer section and the second vertical transfer section each are arranged in each column in accordance with functions of the light receiving sections.

21. A solid-state image capturing device drive method for driving the solid-state image capturing device according to claim 1, comprising:

applying transfer control signals with same or different timings to the second-layer electrodes at the first vertical transfer sections and the second vertical transfer sections in order to control a transfer of signal electrical charges from the first vertical transfer sections and the second vertical transfer sections to the horizontal transfer section in each group of columns.

22. A solid-state image capturing device drive method for driving the solid-state image capturing device according to claim 15, comprising:

applying readout control signals to only one of the first signal readout sections and the second signal readout sections such that a readout of signal electrical charges from the light receiving sections to the first vertical transfer sections or the second vertical transfer sections is controlled in each group of columns and data in columns of the first vertical transfer sections or in columns of the second vertical transfer sections is decimated.

23. A solid-state image capturing device drive method for driving the solid-state image capturing device according to claim 15, comprising:

applying readout control signals to the first signal readout sections and the second signal readout sections with same or different timings such that a readout of signal electrical charges from the plurality of light receiving sections to the first vertical transfer sections and the second vertical transfer sections is controlled in each group of columns and data having a wide dynamic range is created by performing exposures on the plurality of light receiving sections in accordance with light portions and dark portions thereon and by combining two pieces of data.

24. An electronic information device using the solid-state image capturing device according to claim 1 for an image capturing section thereof.