TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES IN NON-VOLATILE MEMORY BASED ON WORD LINE POSITION
First Claim
1. A method for operating non-volatile storage, comprising:
- applying a voltage to a selected word line; and
during the applying, determining a programming condition of at least one non-volatile storage element which is associated with the selected word line, the at least one non-volatile storage element is provided in a set of non-volatile storage elements, and the voltage is temperature-compensated according to a relative position of the selected word line among a plurality of word lines which are associated with the set of non-volatile storage elements.
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Accused Products
Abstract
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.
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Citations
20 Claims
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1. A method for operating non-volatile storage, comprising:
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applying a voltage to a selected word line; and
during the applying, determining a programming condition of at least one non-volatile storage element which is associated with the selected word line, the at least one non-volatile storage element is provided in a set of non-volatile storage elements, and the voltage is temperature-compensated according to a relative position of the selected word line among a plurality of word lines which are associated with the set of non-volatile storage elements. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for operating non-volatile storage, comprising:
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applying a voltage to at least one non-volatile storage element in a set of non-volatile storage element; and
during the applying, determining a programming condition of the at least one non-volatile storage element, the voltage is temperature-compensated according to a position of the at least one non-volatile storage element in the set. - View Dependent Claims (8, 9, 10)
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11. A non-volatile storage system, comprising:
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a set of non-volatile storage elements; and
one or more circuits in communication with the set of non-volatile storage elements via a plurality of word lines, the one or more circuits apply a voltage to a selected word line to determine a programming condition of at least one non-volatile storage element in the set of non-volatile storage elements, the voltage is temperature-compensated according to a relative position of the selected word line among the plurality of word lines. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A non-volatile storage system, comprising:
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a set of non-volatile storage elements; and
one or more circuits in communication with the set of non-volatile storage elements via a plurality of word lines, the one or more circuits;
(a) apply a voltage to at least one non-volatile storage element in the set, and (b) while applying the voltage, determine a programming condition of the at least one non-volatile storage element, the voltage is temperature-compensated according to a position of the at least one non-volatile storage element in the set. - View Dependent Claims (18, 19, 20)
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Specification