Apparatus and method for high-throughput chemical vapor deposition
First Claim
1. Apparatus for depositing at least one in particular thin layer on at least one substrate (9), having a process chamber (1, 20, 11, 11′
- , 40, 21) which is disposed in a reactor housing (2) and has a movable susceptor (20) which carries the at least one substrate (9), into which process chamber there open out a plurality of gas feed lines (24) for the introduction of process gases which are different from one another and contain layer-forming components, it being possible for these to be introduced into the process chamber in successive process steps in order for the layer-forming components to be deposited on the substrate (9), characterized in that the process chamber has a plurality of deposition chambers (11, 11′
) which are separate from one another and into which different gas feed lines (24, 24′
) open out for the introduction of individual gas compositions, and to which the substrate (9) can be conveyed successively by the movement of the susceptor (20), in order for different layers or layer components to be deposited there.
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Accused Products
Abstract
The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11′, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11′) into which different gas feed lines (24, 24′) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.
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Citations
42 Claims
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1. Apparatus for depositing at least one in particular thin layer on at least one substrate (9), having a process chamber (1, 20, 11, 11′
- , 40, 21) which is disposed in a reactor housing (2) and has a movable susceptor (20) which carries the at least one substrate (9), into which process chamber there open out a plurality of gas feed lines (24) for the introduction of process gases which are different from one another and contain layer-forming components, it being possible for these to be introduced into the process chamber in successive process steps in order for the layer-forming components to be deposited on the substrate (9), characterized in that the process chamber has a plurality of deposition chambers (11, 11′
) which are separate from one another and into which different gas feed lines (24, 24′
) open out for the introduction of individual gas compositions, and to which the substrate (9) can be conveyed successively by the movement of the susceptor (20), in order for different layers or layer components to be deposited there. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
- , 40, 21) which is disposed in a reactor housing (2) and has a movable susceptor (20) which carries the at least one substrate (9), into which process chamber there open out a plurality of gas feed lines (24) for the introduction of process gases which are different from one another and contain layer-forming components, it being possible for these to be introduced into the process chamber in successive process steps in order for the layer-forming components to be deposited on the substrate (9), characterized in that the process chamber has a plurality of deposition chambers (11, 11′
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25. Method of depositing at least one in particular thin layer on at least one substrate (9) in a process chamber (11, 11′
- ) which is disposed in a reactor housing (2), in which the substrate (9) is carried by a movable susceptor (20) and into which are introduced different process gases which contain layer-forming components which are deposited on the substrate (9) in successive process steps, characterized in that the different process gases are introduced into deposition chambers (11, 11′
) of the process chamber which are separate from one another, and the at least one substrate is conveyed to the individual deposition chambers (11, 11′
) one after the other by the movement of the susceptor (20), and one of the process steps is carried out in each deposition chamber (11, 11′
). - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
- ) which is disposed in a reactor housing (2), in which the substrate (9) is carried by a movable susceptor (20) and into which are introduced different process gases which contain layer-forming components which are deposited on the substrate (9) in successive process steps, characterized in that the different process gases are introduced into deposition chambers (11, 11′
Specification