Electron microscope for inspecting and processing of an object with miniaturized structures and method thereof

• US 20080099674A1
• Filed: 09/19/2007
• Published: 05/01/2008
• Est. Priority Date: 09/19/2006
• Status: Active Grant

• Current Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: CARL Zeiss SMT GmbH (Carl-Zeiss-Stiftung)
• Inventors: Panteleit, Friedhelm, Bihr, Johannes, Budach, Michael, Clauss, Tobias
• Granted Patent: US 7,645,989 B2
• Time in Patent Office: Days
• US Class Current: 250/307
• CPC Class Codes: G03F 1/72 Repair or correction of mask defects
• CPC Class Codes: G03F 1/86 by charged particle beam [CPB]
• CPC Class Codes: H01J 2237/006 Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608
• CPC Class Codes: H01J 2237/18 Vacuum control means
• CPC Class Codes: H01J 2237/24475 Scattered electron detectors
• CPC Class Codes: H01J 2237/2448 Secondary particle detectors
• CPC Class Codes: H01J 2237/2449 Detector devices with moving charges in electric or magnetic fields
• CPC Class Codes: H01J 2237/30466 Detecting endpoint of process for plasma apparatus H01J37/32963, for sputtering apparatus H01J37/3479
• CPC Class Codes: H01J 2237/30472 Controlling the beam
• CPC Class Codes: H01J 2237/31732 Depositing thin layers on selected microareas ion plating H01J2237/3142
• CPC Class Codes: H01J 2237/31744 introducing gas in vicinity of workpiece
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence
• CPC Class Codes: H01J 37/301 Arrangements enabling beams to pass between regions of different pressure
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3056 for microworking, e.g. etching of gratings, trimming of electrical components trimming of resistors H01C17/22

Abstract

The disclosure relates to a method for manufacturing an object with miniaturized structures. The method involves processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. The disclosure also relates to an electron microscope and a processing system which are adapted for performing the method.

Claims

1. A method of manufacturing an object having miniaturized structures, the method comprising:

(a) processing the object by

supplying process gas to a surface of the object, and

directing an electron beam to a processing location on the surface of the object, for at least one of depositing material on the object and ablating material from the object; and

(b) inspecting the object by

scanning the surface the object with the electron beam and supplying backscattered electrons and secondary electrons, generated by the scanning electron beam, to an energy selector,

reflecting the secondary electrons at the energy selector,

detecting backscattered electrons having traversed the energy selector, and

generating an electron microscopic image of the scanned surface based on the detected backscattered electrons; and

(c) performing one of

(i) repeating the processing and the inspecting of the object, and

(ii) stopping further processing and inspecting of the object, based on an analysis of the generated electron microscopic image of the object.

2. The method according to claim 1, wherein the energy selector comprises two grid electrodes disposed at a distance from each other, and wherein the reflecting of the secondary electrons comprises reflecting the secondary electrons by an electric field generated between the grid electrodes.

3. The method according to claim 1, wherein electrons of the electron beam have, at the surface of the object, a kinetic energy of less than 5 keV.

4. The method according to claim 1, further comprising supplying secondary electrons generated by the scanning electron beam, which are not supplied to the energy selector, to a secondary electron detector, and detecting the secondary electrons supplied to the secondary electron detector.

5. The method according to claim 1, further comprising generating a fourth vacuum in a space in which an electron detecting surface of the secondary electron detector is disposed, and generating a third vacuum in a space in which the energy selector is disposed, and

maintaining, during the processing of the object, a ratio of a gas pressure of the third vacuum and a gas pressure of the fourth vacuum of less than 1:

2.

6. The method according to claim 5, further comprising generating a second vacuum in a space disposed between a space in which an electron beam source is disposed and the space in which the energy selector is disposed, generating a first vacuum in a space in which the electron beam source is disposed, and

maintaining, during the processing of the object,

a ratio of a gas pressure of the first vacuum and a gas pressure of the second vacuum, and

a ratio of the gas pressure of the second vacuum and a gas pressure of the third vacuum,

to be each smaller than 1:

10.

7. A processing system for inspecting and processing of an object having miniaturized structures, the electron microscopy system comprising:

an electron beam source for generating an electron beam;

a focussing lens for focussing the electron beam onto the object;

a secondary electron detector disposed at a distance from the object;

an energy selector disposed at a greater distance from the object than the secondary electron detector;

a backscattered electron detector disposed at a greater distance from the object than the energy selector;

a first vacuum space in which the electron beam source is disposed;

a second vacuum space which is partially separated from the first vacuum space by a first separating structure comprising an aperture traversed by the electron beam;

a third vacuum space in which the backscattered electron detector is disposed, wherein the third vacuum space is partially separated from the second vacuum space by a second separating structure (26) comprising an aperture traversed by the electron beam; and

a fourth vacuum space in which a surface of the secondary electron detector is disposed, wherein the fourth vacuum space is partially separated from the third vacuum space by a third separating structure (27) comprising an aperture traversed by the electron beam.

8. The processing system according to claim 7, wherein the third separating structure comprises the secondary electron detector.

9. The processing system according to claim 7, wherein the energy selector is configured to separate secondary electrons and backscattered electrons from each other.

10. The processing system according to claim 9, wherein the energy selector is configured to reflect the secondary electrons.

11. The processing system according to claim 9, wherein the energy selector is configured such that only backscattered electrons having a kinetic energy above a predetermined threshold energy are allowed to reach at the backscattered electron detector.

12. The processing system according to claim 7, wherein the energy selector comprises two grid electrodes disposed at a distance from each other, and a voltage source for generating an electric field between the two grid electrodes.

13. The processing system according to claim 7, further comprising a gas supply arrangement for supplying a reaction gas to a surface of the object.

14. The processing system according to claim 7, further comprising first, second and third vacuum pumps, wherein a housing of the first vacuum space comprises an opening communicating with the first vacuum pump,

wherein a housing of the second vacuum space comprises an opening communicating with the second vacuum pump,

wherein a housing of the third vacuum space comprises an opening communicating with the third vacuum pump.

15. The processing system according to claim 7, further comprising a fifth vacuum space in which the object is disposed,

wherein a housing of the fourth vacuum space comprises an opening not traversed by the electron beam,

wherein a housing of the fifth vacuum space comprises an opening not traversed by the electron beam and communicating with the opening of the fourth vacuum space.

16. The processing system according to claim 15, further comprising a fourth vacuum pump different from the first, second and third vacuum pumps, wherein the housing of the fifth vacuum space comprises an opening communicating with the fourth vacuum pump.

17. The processing system according to claim 15, wherein the fifth vacuum space comprises an opening communicating with the third vacuum pump.

18. The processing system according to claim 7, wherein the electron microscopy system is configured such that, during operation,

a ratio of a gas pressure in the first vacuum space and a gas pressure in the second vacuum space, and

a ratio of the gas pressure in the second vacuum space and a gas pressure in the third vacuum space are each smaller than 1:

10.

19. The processing system according to claim 7, wherein the electron microscopy system is further configured such that, during operation,

a ratio of the gas pressure in the third vacuum space and a gas pressure in the fourth vacuum space is smaller than 1:

2.