MEMORY CELL AND METHOD FOR FORMING THE SAME
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Accused Products
Abstract
A semiconductor memory cell structure having 4F2 dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the substrate over the active region and a capacitor is formed on the semiconductor post. A vertical access transistor having a gate structure formed on the semiconductor post is configured to electrically couple the respective memory cell capacitor to the active region when accessed.
43 Citations
125 Claims
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1-100. -100. (canceled)
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101. A memory cell formed on a surface of a substrate, comprising:
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a vertical transistor comprising;
an active region formed in the substrate;
an epitaxial post extending from the surface of the substrate over the active region; and
a gate formed at least partially around a perimeter of the epitaxial post; and
a memory cell capacitor formed over the epitaxial post. - View Dependent Claims (102, 103, 104, 105, 106, 107, 108)
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109. A memory cell formed on a surface of a substrate, comprising:
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an active region formed in the substrate;
a vertical transistor at least partially formed in a semiconductor post, the semiconductor post formed on the surface of the substrate and extending therefrom, the vertical transistor further having a gate formed at least partially around a perimeter of the semiconductor post; and
a memory cell capacitor electrically coupled to the semiconductor post of the vertical transistor. - View Dependent Claims (110, 111, 112, 113, 114, 115, 116, 117)
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118. A plurality of memory cells formed on a surface of a substrate, comprising:
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an active region formed in the substrate;
a plurality of semiconductor posts formed on the surface of the substrate over the active region;
a plurality of memory cell capacitors each formed over a respective one of the plurality of semiconductor posts; and
a plurality of gate structures each formed adjacent a respective one of the plurality of semiconductor posts to provide a respective vertical transistor configured to electrically couple a respective one of the memory cell capacitors to the active region. - View Dependent Claims (119, 120, 121, 122, 123, 124, 125)
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Specification