PACKAGED MICROELECTRONIC DEVICES AND METHODS FOR PACKAGING MICROELECTRONIC DEVICES
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Accused Products
Abstract
Packaged microelectronic devices and methods for packaging microelectronic devices are disclosed herein. In one embodiment, a method of packaging a microelectronic device including a microelectronic die having a first side with a plurality of bond-pads and a second side opposite the first side includes forming a recess in a substrate, placing the microelectronic die in the recess formed in the substrate with the second side facing toward the substrate, and covering the first side of the microelectronic die with a dielectric layer after placing the microelectronic die in the recess. The substrate can include a thermal conductive substrate, such as a substrate comprised of copper and/or aluminum. The substrate can have a coefficient of thermal expansion at least approximately equal to the coefficient of thermal expansion of the microelectronic die or a printed circuit board.
46 Citations
93 Claims
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1-74. -74. (canceled)
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75. A packaged semiconductor device, comprising:
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a substrate having a substrate surface and a recess extending from the substrate surface into the substrate;
a semiconductor die in the recess, the semiconductor die having an integrated circuit and a bond site proximate to the substrate surface;
an electric coupler on the bond site of the semiconductor die;
a dielectric layer having a first portion over the semiconductor die and the electric coupler and a second portion in the recess of the substrate, the first portion of the dielectric layer having a thickness approximately equal to a height of the electric coupler relative to the substrate surface; and
a conductive link on the dielectric layer and in direct contact with the electric coupler. - View Dependent Claims (76, 77, 78, 79, 80)
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81. A packaged semiconductor device, comprising:
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a substrate having a substrate surface and a recess extending from the substrate surface into the substrate;
a semiconductor die in the recess and having an integrated circuit and a bond site proximate to the substrate surface;
an electric coupler having a first end contacting the bond site of the semiconductor die and a second end opposite the first end;
a dielectric layer having a first portion over the semiconductor die and the electric coupler and a second portion in the recess, the first portion of the dielectric layer having a first surface proximate to the substrate surface and a second surface opposite the first surface, wherein the second end of the electric coupler does not project beyond the second surface of the dielectric layer; and
a conductive link on the second surface of the dielectric layer and in electrical communication with the electric coupler. - View Dependent Claims (82, 83, 84, 85, 86, 87)
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88. A packaged semiconductor device, comprising:
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a substrate having a substrate surface and a recess extending from the substrate surface into the substrate;
a semiconductor die in the recess and having a first side with a bond site and a second side opposite the first side; and
a redistribution assembly coupled to the substrate, the redistribution assembly having an electric coupler on the bond site of the semiconductor die, a dielectric layer having a first portion over the first side of the semiconductor die and the electric coupler and a second portion in the recess, and a conductive link on the dielectric layer and in physical contact with the electric coupler. - View Dependent Claims (89, 90, 91, 92, 93)
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Specification