Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
First Claim
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1. A plasma reactor for processing a workpiece, comprising:
- a vacuum chamber having a ceiling and a sidewall;
a workpiece support pedestal within said chamber including a cathode having a surface for supporting a workpiece, said surface comprising plural respective zones, said respective zones of said surface being formed of respective materials of different electrical characteristics.
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Abstract
A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.
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Citations
20 Claims
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1. A plasma reactor for processing a workpiece, comprising:
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a vacuum chamber having a ceiling and a sidewall; a workpiece support pedestal within said chamber including a cathode having a surface for supporting a workpiece, said surface comprising plural respective zones, said respective zones of said surface being formed of respective materials of different electrical characteristics. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A wafer support pedestal for use in a plasma reactor, comprising:
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a cathode formed of a first metal; a facilities plate formed of said first metal, said cathode having a bottom surface and said facilities plate having a top surface facing the bottom surface of said cathode; plural elongate fasteners formed of a second metal having a higher strength that said first metal, said plural elongate fasteners joining said cathode and said facilities plate together along a periphery of said cathode and facilities plate; a thin ring layer between said cathode and said facilities plate formed of said second metal and being located at the periphery of said cathode and facilities plate; a coating of a very high conductivity metal on the periphery of said bottom surface of said cathode and a coating of said very high conductivity metal on the periphery of said top surface of said facilities plate; and an annular groove in one of (a) said top surface of said facilities plate, (b) said bottom surface of said cathode, said annular groove being located at the periphery thereof, and a conductive compressible gasket within said annular groove. - View Dependent Claims (20)
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Specification