VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION
First Claim
1. A chamber for processing substrates, comprising:
- a substrate support comprising a substrate receiving surface; and
a chamber lid assembly comprising;
a gas dispersing channel at a central portion of the chamber lid assembly, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis;
a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas inlet within the converging portion of the gas dispersing channel; and
a second conduit coupled to a second gas inlet within the converging portion of the gas dispersing channel, wherein the first conduit and the second conduit are positioned to provide a circular gas flow pattern through the gas dispersing channel.
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Accused Products
Abstract
Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.
321 Citations
25 Claims
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1. A chamber for processing substrates, comprising:
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a substrate support comprising a substrate receiving surface; and
a chamber lid assembly comprising;
a gas dispersing channel at a central portion of the chamber lid assembly, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis;
a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas inlet within the converging portion of the gas dispersing channel; and
a second conduit coupled to a second gas inlet within the converging portion of the gas dispersing channel, wherein the first conduit and the second conduit are positioned to provide a circular gas flow pattern through the gas dispersing channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface; and
a chamber lid assembly comprising;
a gas dispersing channel at a central portion of the chamber lid assembly, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis;
a first conduit coupled to a first gas inlet within the converging portion of the gas dispersing channel;
a second conduit coupled to a second gas inlet within the converging portion of the gas dispersing channel, wherein the first conduit and the second conduit are positioned to provide a circular gas flow pattern; and
a first valve coupled to the first conduit and a second valve coupled to the second conduit, where the first and second valves enable an atomic layer deposition process with a pulse time of about 2 seconds or less. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method for depositing a material on a substrate, comprising:
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positioning a substrate on a substrate support within a process chamber comprising a chamber body and a chamber lid assembly, wherein the chamber lid assembly comprises;
a gas dispersing channel at a central portion of the chamber lid assembly, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis;
a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate;
a first conduit coupled to a first gas inlet within the converging portion of the gas dispersing channel; and
a second conduit coupled to a second gas inlet within the converging portion of the gas dispersing channel, wherein the first conduit and the second conduit are positioned to provide a circular gas flow pattern;
flowing at least one carrier gas through the first and second conduits to form a circular flowing gas;
exposing the substrate to the circular flowing gas;
pulsing at least one precursor into the circular flowing gas; and
depositing a material comprising at least one element derived from the at least one precursor onto the substrate.
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Specification