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ELECTRICAL DIE CONTACT STRUCTURE AND FABRICATION METHOD

  • US 20080102604A1
  • Filed: 01/04/2008
  • Published: 05/01/2008
  • Est. Priority Date: 05/13/2002
  • Status: Active Grant
First Claim
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1. A method for producing electrical die contact structures for integrated circuit devices, the method including the steps of:

  • providing a plurality of integrated circuits on a semiconductor wafer having a front side and a backside, each of the integrated circuits being delineated from other integrated circuits on the wafer by a plurality of saw streets and each integrated circuit including a multiplicity of electrical contact pads with contact pad extensions that extend into the saw streets;

    attaching a front side protective layer to a front side surface of the wafer;

    removing material from the backside of the wafer in the saw streets until a bottom surface of the contact pad extensions is exposed, thereby defining notches along edges of the integrated circuit devices;

    forming electrical connections on the backside of the semiconductor substrate;

    forming a backside metal layer such that a tail portion of the metal layer overlaps the bottom surface of the contact pad extensions and such that the contact pad extensions are electrically interconnected with electrical connections; and

    separating the plurality of integrated circuit devices into individual devices.

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