ETCHING OXIDE WITH HIGH SELECTIVITY TO TITANIUM NITRIDE
First Claim
Patent Images
1. A method for etching a substrate, the method comprising:
- (a) providing a substrate in a process zone, the substrate comprising an oxide layer above a titanium nitride layer;
(b) introducing a process gas comprising H2 into the process zone; and
(c) energizing the process gas to etch through the oxide layer to at least partially expose the titanium nitride layer, the energized process gas having an etching selectivity ratio of etching the oxide layer to etching the titanium nitride layer of at least 25;
1.
1 Assignment
0 Petitions
Accused Products
Abstract
A substrate comprising an oxide layer covering a nitride layer, is etched in a process zone of a substrate processing chamber. A process gas comprising H2 gas is introduced into the process zone, and the process gas is energized to etch through the oxide layer to at least partially expose the nitride layer. The energized process gas has a selectivity of etching the oxide layer to the nitride layer of at least about 25:1.
181 Citations
27 Claims
-
1. A method for etching a substrate, the method comprising:
-
(a) providing a substrate in a process zone, the substrate comprising an oxide layer above a titanium nitride layer; (b) introducing a process gas comprising H2 into the process zone; and (c) energizing the process gas to etch through the oxide layer to at least partially expose the titanium nitride layer, the energized process gas having an etching selectivity ratio of etching the oxide layer to etching the titanium nitride layer of at least 25;
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method for etching a substrate in a substrate processing chamber comprising an antenna and process electrodes, the method comprising:
-
(a) providing a substrate in the chamber, the substrate comprising a silicon dioxide layer above a titanium nitride layer; (b) introducing a process gas comprising an etchant gas, a carrier gas and H2 gas into the chamber; and (c) applying a bias RF power level to the process electrodes and a source RF power level to the antenna to energize the process gas to etch the silicon dioxide layer at a faster rate than the titanium nitride layer, the energized process gas having a selectivity of etching the silicon dioxide layer to the titanium nitride layer of at least 25;
1. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
-
21. A substrate processing apparatus comprising:
-
(a) a process chamber comprising; (i) a substrate support comprising a receiving surface for a substrate; (ii) a gas distributor to distribute a process gas in the chamber; (iii) a gas energizer to energize the process gas, the gas energizer comprising an antenna and process electrodes; and (iv) a gas exhaust to exhaust the process gas; (b) a substrate transfer mechanism communicable to the process chamber, the substrate transfer mechanism configured to transfer a substrate to the chamber; and (c) a controller operatively coupled to the process chamber, the substrate transfer mechanism, the gas distributor, the gas energizer and the gas is exhaust, the controller comprising a program code that includes instructions to operate; (i) the substrate transfer mechanism; (ii) the gas distributor; and (iii) the gas energizer to apply a bias RF power level to the process electrodes and a source RF power level to the antenna, wherein the process gas is energized to etch a silicon dioxide layer relative to a titanium nitride layer with an etching selectivity ratio of at least 25;
1. - View Dependent Claims (22, 23, 24, 25, 26, 27)
-
Specification