Flash memory device with multi-level cells and method of writing data therein
First Claim
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1. A method of writing data in a flash memory system, the flash memory system forming an address mapping pattern according to a log block mapping scheme, the method comprising:
- determining a writing pattern of data to be written in a log block; and
allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
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Abstract
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
330 Citations
39 Claims
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1. A method of writing data in a flash memory system, the flash memory system forming an address mapping pattern according to a log block mapping scheme, the method comprising:
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determining a writing pattern of data to be written in a log block; and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of writing data in an MLC flash memory system, the flash memory system forming an address mapping pattern according to a log block mapping scheme, the method comprising:
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determining a writing pattern of data to be written in the MLC flash memory; allocating one of first and second blocks to a log block for a write buffer in accordance with the writing pattern of the data. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of mapping addresses in a flash memory system, the flash memory system forming an address mapping pattern in accordance with a log block mapping scheme, the method comprising:
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including a plurality of SLC blocks in a log block; and using an MLC block for a data block corresponding to the log block. - View Dependent Claims (22, 23, 24, 25)
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26. A method of writing data in a flash memory system, the flash memory system forming an address mapping pattern in accordance with a log block mapping scheme, the method comprising:
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(a) allocating at least first and second blocks to a log block; (b) writing the data into the first block; (c) determining a size of valid pages of the first block; (d) copying data of the valid pages into the second block; (e) writing the data into the second block; and (f) determining a size of valid pages of the second block. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A memory system which forms an address mapping pattern on accordance with a log block mapping scheme, comprising:
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a flash memory device including pluralities of SLC and MLC blocks as storage fields; and a controller which detects a writing pattern of externally supplied data and which selects a part of the SLC blocks or one of the plural MLC blocks as a log block in accordance with the detected writing pattern. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39)
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Specification