×

Flash memory device with multi-level cells and method of writing data therein

  • US 20080104309A1
  • Filed: 02/06/2007
  • Published: 05/01/2008
  • Est. Priority Date: 10/30/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method of writing data in a flash memory system, the flash memory system forming an address mapping pattern according to a log block mapping scheme, the method comprising:

  • determining a writing pattern of data to be written in a log block; and

    allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×