Plating Device, Plating Method, Semiconductor Device, And Method For Manufacturing Semiconductor Device

• US 20080105555A1
• Filed: 12/08/2005
• Published: 05/08/2008
• Est. Priority Date: 12/16/2004
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Iwazaki, Yoshihide
• Application Number:
  US11/792,812
• Publication Number:
  US 20080105555A1
• Time in Patent Office: Days
• US Class Current: 205/99
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 17/002 Cell separation, e.g. membranes, diaphragms
• CPC Class Codes: C25D 17/02 Tanks; Installations therefor
• CPC Class Codes: C25D 17/10 Electrodes , e.g. composition, counter electrode
• CPC Class Codes: C25D 21/06 Filtering particles other than ions filtering ions C25D21/22
• CPC Class Codes: C25D 5/02 Electroplating of selected surface areas
• CPC Class Codes: C25D 5/08 Electroplating with moving electrolyte e.g. jet electroplating using locally applied jets of electrolyte C25D5/026
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/0615 : Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/1148 : Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13024 : the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN

Abstract

An object of the present invention is to provide a face-down type jet plating device in which deterioration in plating quality due to minute solid foreign matters derived from a black film etc. is prevented without impairing operativity. The plating device is designed such that a partition (7) is provided between a semiconductor wafer (1) and an anode (5) so that the anode (5) and the semiconductor wafer (7) are separated from each other and a plating tank (100) is divided into a substrate-to-be-plated chamber and an anode chamber.

Claims

1-32. -32. (canceled)

33. A plating device, comprising a plating tank which has an anode therein and causing a plating solution to flow into the plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between the anode and the substrate-to-be-plated, so that plating is performed,

the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup,

the first cylindrical cup being provided with the anode and having a bottom provided with a plating solution flowing-in port via which the plating solution flows into the plating tank,

a gap between side walls of the first cylindrical cup and the second cylindrical cup serving as a plating solution flowing-out port via which the plating solution having flowed into the anode chamber flows out of the plating tank,

the second cylindrical cup having a bottom which is a partition separating the anode from the substrate-to-be-plated,

the plating tank being divided into an anode chamber surrounded by the partition and the first cylindrical cup and a substrate-to-be-plated chamber surrounded by the partition and the first cylindrical cup, and

a plating solution jetting pipe being provided so as to jet the plating solution to the surface-to-be-plated of the substrate-to-be-plated, the plating solution jetting pipe penetrating the partition and allowing a laminar flow of the plating solution from the plating solution flowing-in port to be divided into a laminar flow of the plating solution to the first cylindrical cup and a laminar flow of the plating solution to the second cylindrical cup.

34. The plating device as set forth in claim 33, wherein the plating solution having flowed into the anode chamber does not flow into the substrate-to-be-plated chamber.

35. The plating device as set forth in claim 33, wherein a portion which separates the anode from the substrate-to-be-plated and which includes the partition in the plating tank is partially or entirely made of a permeation member which, when immersed in the plating solution, allows ions in the plating solution to permeate the permeation member.

36. The plating device as set forth in claim 35, wherein the permeation member is a semipermeable membrane.

37. The plating device as set forth in claim 35, wherein the permeation member includes an ion exchange membrane.

38. The plating device as set forth in claim 33, wherein the partition has a thickness ranging from 50 to 200 μ

m.

39. The plating device as set forth in claim 33, wherein the partition includes a hydrocarbon cation exchange membrane.

40. The plating device as set forth in claim 33, further comprising:

a plating solution supplying source for storing a plating solution to be supplied to the plating tank;

plating solution supplying means for supplying the plating solution stored in the plating solution supplying source to the plating tank; and

plating solution filtering means for filtering the plating solution supplied by the plating solution supplying means,

the plating solution stored in the plating solution supplying source being supplied to the plating tank by the plating solution supplying means and via the plating solution filtering means, and

the plating solution supplied to the plating tank being supplied again to the plating solution supplying source.

41. The plating device as set forth in claim 33, wherein the plating solution includes a copper component and is conductive.

42. The plating device as set forth in claim 33, wherein the plating solution includes a copper component of not less than 14 g and not more than 40 g per 1 lifter of the plating solution.

43. The plating device as set forth in claim 33, wherein the anode is a soluble anode made of high phosphorous copper.

44. The plating device as set forth in claim 33, wherein the substrate-to-be-plated is a semiconductor wafer.

45. A plating method for causing a plating solution to flow into a plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between an anode in the plating tank and the substrate-to-be-plated, so that plating is performed,

the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup,

said method comprising the steps of:

dividing a laminar flow of the plating solution into a laminar flow of the plating solution jetted to the surface-to-be-plated and a laminar flow of the plating solution flowing to a neighbor of the anode; and

causing the plating solution having flowed into the anode chamber to flow out of the plating tank via a plating solution flowing-out port which is a gap between side walls of the first cylindrical cup and the second cylindrical cup.

46. A method for manufacturing a semiconductor device, comprising the step (I) of causing a plating solution to flow into a plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between an anode and the substrate-to-be-plated in the plating tank, so that plating is performed,

the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup,

in the step (I), the anode and the surface-to-be-plated being positioned to be separated from each other in the plating tank by a partition,

a flow of the plating solution being divided into a flow to the surface-to-be-plated and a flow to a neighbor of the anode, and

the plating solution having flowed into the anode chamber is caused to flow out of the plating tank via a plating solution flowing-out port which is a gap between side walls of the first cylindrical cup and the second cylindrical cup.

47. The method as set forth in claim 46, wherein in the step (I), the plating solution having flowed to the neighbor of the anode does not flow to the surface-to-be-plated.

48. The method as set forth in claim 46, wherein a portion which separates the anode from the substrate-to-be-plated and which includes the partition in the plating tank is partially or entirely made of a permeation member which, when immersed in the plating solution, allows ions in the plating solution to permeate the permeation member.

49. The method as set forth in claim 48, wherein the permeation member is a semipermeable membrane.

50. The method as set forth in claim 48, wherein the permeation member includes an ion exchange membrane.

51. The method as set forth in claim 46, wherein the partition has a thickness ranging from 50 to 200 μ

m.

52. The method as set forth in claim 46, wherein the partition includes a hydrocarbon cation exchange membrane.

53. The method as set forth in claim 46, wherein the step (I) includes the sub-steps of:

(i) supplying a plating solution stored in a plating solution supplying source to the plating tank;

(ii) filtering the plating solution supplied in the sub-step (i); and

(iii) supplying again the plating solution supplied to the plating tank to the plating solution supplying source.

54. The method as set forth in claim 46, wherein the plating solution includes a copper component and is conductive.

55. The method as set forth in claim 46, wherein the plating solution includes a copper component of not less than 14 g and not more than 40 g per 1 litter of the plating solution.

56. The method as set forth in claim 46, wherein the anode is a soluble anode made of high phosphorous copper.

57. The method as set forth in claim 46, wherein the substrate-to-be-plated is a semiconductor wafer.

58. The method as set forth in claim 46, further comprising the steps of:

(II) forming a seed layer on the surface-to-be-plated;

(III) applying photoresist on a surface of the seed layer formed in the step (II); and

(IV) forming a pattern by exposing and developing the photoresist,

the steps (II) to (IV) being performed before the step (I).

59. A semiconductor device, manufactured through a method as set forth in claim 46.