Plating Device, Plating Method, Semiconductor Device, And Method For Manufacturing Semiconductor Device
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Abstract
An object of the present invention is to provide a face-down type jet plating device in which deterioration in plating quality due to minute solid foreign matters derived from a black film etc. is prevented without impairing operativity. The plating device is designed such that a partition (7) is provided between a semiconductor wafer (1) and an anode (5) so that the anode (5) and the semiconductor wafer (7) are separated from each other and a plating tank (100) is divided into a substrate-to-be-plated chamber and an anode chamber.
122 Citations
59 Claims
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1-32. -32. (canceled)
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33. A plating device, comprising a plating tank which has an anode therein and causing a plating solution to flow into the plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between the anode and the substrate-to-be-plated, so that plating is performed,
the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup, the first cylindrical cup being provided with the anode and having a bottom provided with a plating solution flowing-in port via which the plating solution flows into the plating tank, a gap between side walls of the first cylindrical cup and the second cylindrical cup serving as a plating solution flowing-out port via which the plating solution having flowed into the anode chamber flows out of the plating tank, the second cylindrical cup having a bottom which is a partition separating the anode from the substrate-to-be-plated, the plating tank being divided into an anode chamber surrounded by the partition and the first cylindrical cup and a substrate-to-be-plated chamber surrounded by the partition and the first cylindrical cup, and a plating solution jetting pipe being provided so as to jet the plating solution to the surface-to-be-plated of the substrate-to-be-plated, the plating solution jetting pipe penetrating the partition and allowing a laminar flow of the plating solution from the plating solution flowing-in port to be divided into a laminar flow of the plating solution to the first cylindrical cup and a laminar flow of the plating solution to the second cylindrical cup.
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45. A plating method for causing a plating solution to flow into a plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between an anode in the plating tank and the substrate-to-be-plated, so that plating is performed,
the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup, said method comprising the steps of: -
dividing a laminar flow of the plating solution into a laminar flow of the plating solution jetted to the surface-to-be-plated and a laminar flow of the plating solution flowing to a neighbor of the anode; and causing the plating solution having flowed into the anode chamber to flow out of the plating tank via a plating solution flowing-out port which is a gap between side walls of the first cylindrical cup and the second cylindrical cup.
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46. A method for manufacturing a semiconductor device, comprising the step (I) of causing a plating solution to flow into a plating tank and to jet upward to touch a surface-to-be-plated of a substrate-to-be-plated while electrifying between an anode and the substrate-to-be-plated in the plating tank, so that plating is performed,
the plating tank having a double structure including a first cylindrical cup and a second cylindrical cup whose external diameter is smaller than that of the first cylindrical cup, in the step (I), the anode and the surface-to-be-plated being positioned to be separated from each other in the plating tank by a partition, a flow of the plating solution being divided into a flow to the surface-to-be-plated and a flow to a neighbor of the anode, and the plating solution having flowed into the anode chamber is caused to flow out of the plating tank via a plating solution flowing-out port which is a gap between side walls of the first cylindrical cup and the second cylindrical cup.
Specification