Method of fabricating organic thin film transistor using self assembled monolayer-forming compound containing dichlorophosphoryl group

• US 20080105866A1
• Filed: 05/24/2007
• Published: 05/08/2008
• Est. Priority Date: 11/02/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Jeong, Eun Jeong, Lee, Sang Yoon, Park, Jeong Il, Hahn, Jung Seok
• Application Number:
  US11/802,657
• Publication Number:
  US 20080105866A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: C07F 9/14 containing P(=O)-halide groups
• CPC Class Codes: C07F 9/1406 containing the structure Hal-P(=O)-O-aryl
• CPC Class Codes: C07F 9/572 Five-membered rings
• CPC Class Codes: C07F 9/65515 the oxygen atom being part of a five-membered ring
• CPC Class Codes: C07F 9/655345 the sulfur atom being part of a five-membered ring
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes

Abstract

Disclosed is a method of fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes, and an organic semiconductor layer, in which the surface of the metal oxide source/drain electrodes or of the metal oxide source/drain electrodes and gate insulating layer is treated with a self assembled monolayer-forming compound containing a dichlorophosphoryl group. According to the method of example embodiments, the work function of the metal oxide of the source/drain electrodes may be increased to be higher than that with no SAM-forming electrode, thus making it possible to fabricate an improved organic thin film transistor having increased charge mobility.

Claims

1. A method comprising:

treating a surface of metal oxide source/drain electrodes or a surface of the metal oxide source/drain electrodes and a gate insulating layer with a self assembled monolayer-forming compound containing a dichlorophosphoryl group.

2. The method as set forth in claim 1, wherein the metal oxide source/drain electrodes and the gate insulating layer are components of an organic thin film transistor that further comprises a substrate, a gate electrode, and an organic semiconductor layer.

3. The method as set forth in claim 1, wherein the self assembled monolayer-forming compound containing a dichlorophosphoryl group is represented by Formula 1 below:

4. The method as set forth in claim 3, wherein the self assembled monolayer-forming compound containing a dichlorophosphoryl group represented by Formula 1 is represented by Formulas 2 to 4 below:

5. The method as set forth in claim 4, wherein the self assembled monolayer-forming compound containing a dichlorophosphoryl group represented by Formulas 2 to 4 is represented by Formulas 5 to 15 below:

6. The method as set forth in claim 3, wherein the R of Formula 1 includes one or more fluorine atoms.

7. The method as set forth in claim 1, wherein treating is performed through an immersion process using a self assembled monolayer-forming solution obtained by dissolving the self assembled monolayer-forming compound containing a dichlorophosphoryl group in a solvent selected from an organic solvent, and mixtures thereof.

8. The method as set forth in claim 7, wherein the organic solvent is selected from the group consisting of alcohols, ethers, chlorine-based alkanes, aromatics, and glycols.

9. The method as set forth in claim 7, wherein the immersion process is performed at about 20°

C.˜

about 200°

C. for a time period ranging from about 10 sec to about 2 hours.

10. The method as set forth in claim 1, further comprising:

annealing the surface of a metal oxide layer after treating the surface of the metal oxide layer.

11. The method as set forth in claim 2, wherein the substrate is formed using material selected from the group consisting of glass, silicon, and plastic.

12. The method as set forth in claim 2, wherein the gate electrode is formed using material selected from the group consisting of gold (Au), silver (Ag), aluminum (Al), nickel (Ni), molybdenum (Mo), tungsten (W), indium tin oxide (ITO), polythiophene, polyaniline, polyacetylene, polypyrrole, polyphenylene vinylene, and a mixture of PEDOT (polyethylenedioxythiophene) and PSS (polystyrenesulfonate).

13. The method as set forth in claim 1, wherein the gate insulating layer is formed using material selected from the group consisting of organic materials, including PVP, polyimide, PVA, PE, siloxane, organic-inorganic hybrids, and derivatives thereof, and inorganic materials, including SiN_x (0<

x<

4), SiO₂ and Al₂O₃.

14. The method as set forth in claim 1, wherein the metal oxide source/drain electrodes are formed using material selected from the group consisting of ITO and IZO.

15. The method as set forth in claim 2, wherein the organic semiconductor layer is formed using material selected from the group consisting of pentacene, tetracene, copper phthalocyanine, polythiophene, polyaniline, polyacetylene, polypyrrole, polyphenylenevinylene, and derivatives thereof.

16. An organic thin film transistor, fabricated using the method of claim 1.

17. A display device, fabricated using the organic thin film transistor of claim 16.

18. A self assembled monolayer-forming compound comprising:

a dichlorophosphoryl group is represented by Formula 1 below;

19. The self assembled monolayer-forming compound as set forth in claim 18, wherein the self assembled monolayer-forming compound including a dichlorophosphoryl group represented by Formula 1 is represented by Formulas 2 to 4 below:

20. The self assembled monolayer-forming compound as set forth in claim 19, wherein the self assembled monolayer-forming compound including a dichlorophosphoryl group represented by Formulas 2 to 4 is represented by Formulas 5 to 15 below:

21. The self assembled monolayer-forming compound as set forth in claim 19, wherein the R of Formula 1 includes one or more fluorine atoms.