Group III nitride based semiconductor and production method therefor
First Claim
1. A method for producing a group III nitride based semiconductor, characterized in that the method comprises a step of wet-etching an upper surface of a first layer comprising a first group III nitride based semiconductor with an aqueous TMAH solution, to thereby form an etch pit, and a step of forming, on the upper surface of the first layer, a second layer comprising a second group III nitride based semiconductor so that an upper portion of the etch pit is filled with the second layer.
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Abstract
The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects.
A GaN layer 2 is epitaxially grown on a sapphire substrate 1 having C-plane as a main plane (FIG. 1A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85° C. for one hour, to thereby form an etch pit 4 (FIG. 1B) Then, a GaN layer 5 is grown on the GaN layer 2 through the ELO method (FIG. 1C). The thus-formed GaN layer 5 has a screw dislocation density lower than that of the GaN layer 2.
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Citations
15 Claims
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1. A method for producing a group III nitride based semiconductor, characterized in that the method comprises
a step of wet-etching an upper surface of a first layer comprising a first group III nitride based semiconductor with an aqueous TMAH solution, to thereby form an etch pit, and a step of forming, on the upper surface of the first layer, a second layer comprising a second group III nitride based semiconductor so that an upper portion of the etch pit is filled with the second layer.
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14. A group III nitride based semiconductor, having a structure including a first layer comprising a first group III nitride based semiconductor and a second layer comprising a second group III nitride based semiconductor which layer is formed on an upper surface of the first layer, characterized in that
the first layer has C-plane as a main plane; -
the first layer contains a hexagonal-prismatic etch pit formed therein; and
the second layer is formed so that an upper portion of the etch pit is filled with the second layer. - View Dependent Claims (15)
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Specification