REPAIRING METHOD OF A THIN FILM TRANSISTOR ARRAY SUBSTRATE

• US 20080106692A1
• Filed: 01/09/2008
• Published: 05/08/2008
• Est. Priority Date: 08/05/2004
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Lai, Han-Chung
• Granted Patent: US 7,436,466 B2
• Time in Patent Office: Days
• US Class Current: 349/192
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136259 Repairing; Defects

Abstract

A method for repairing the storage capacitor on gate or the storage capacitor on common line is described. A portion area of the each pixel electrode is disposed above one of the scan lines or one of the common lines. An upper electrode is disposed between the pixel electrode and the corresponding scan line or the common line. The pixel electrode and the upper electrode are electrically connected. A defective capacitor is formed when a particle/defect is produced between the upper electrode and the common line or the scan line. The method of repairing the defective capacitor includes removing a portion area of the pixel electrode corresponding to the upper electrode of a defective storage capacitor and electrically isolating the upper electrode and the corresponding pixel electrode of the defective storage capacitor. The upper electrode and the scan line or common line of the defective capacitor are welded together.

Claims

1. A method of repairing a thin film transistor array substrate having a capacitor on gate structure (Cst on gate), wherein a portion area of each pixel electrode over the substrate is disposed over one of the scan lines, an upper electrode is disposed between the pixel electrode and the corresponding scan line and the pixel electrode and the upper electrode are electrically connected together, and when a first particle/defect lies between the upper electrodes and one of the scan lines and forms a defective capacitor, the repairing method comprising the step of:

removing a portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor so that the upper electrode of the defective capacitor and the corresponding pixel electrode are electrically isolated.

2. The repairing method of claim 1, wherein after removing the portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor, further comprises:

welding the upper electrode of the defective capacitor with one of the scan lines.

3. The repairing method of claim 1, wherein the step of removing the portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor comprises performing a laser ablation process.

4. The repairing method of claim 2, wherein the step of welding the upper electrode of the defective capacitor and the corresponding scan line together comprises performing a laser welding process.

5. The repairing method of claim 1, wherein should a second particle/defect happen to be disposed between one of the pixel electrodes and one of the scan lines, further comprises:

removing a portion area of the pixel electrode above the second particle/defect so that the second particle/defect is electrically isolated from the pixel electrode.

6. The repairing method of claim 5, wherein the step of removing the portion area of the pixel electrode above the second particle/defect comprises performing a laser ablation process.

7. A method of repairing a thin film transistor array substrate having a capacitor on common line structure (Cst on common), wherein a portion area of each pixel electrode over the substrate is disposed over one of the common lines, an upper electrode is disposed between the pixel electrode and the corresponding common line and the pixel electrode and the upper electrode are electrically connected together, and when a first particle/defect lies between the upper electrodes and one of the common lines and forms a defective capacitor, the repairing method comprising the step of:

removing a portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor so that the upper electrode of the defective capacitor and the corresponding pixel electrode are electrically isolated.

8. The repairing method of claim 7, wherein after removing the portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor, further comprises:

welding the upper electrode of the defective capacitor with one of the common lines.

9. The repairing method of claim 7, wherein the step of removing the portion area of the pixel electrode corresponding to the upper electrode of the defective capacitor comprises performing a laser ablation process.

10. The repairing method of claim 8, wherein the step of welding the upper electrode of the defective capacitor and the corresponding common line together comprises performing a laser welding process.

11. The repairing method of claim 7, wherein should a second particle/defect happen to be disposed between one of the pixel electrodes and one of the common lines, further comprises:

removing a portion area of the pixel electrode above the second particle/defect so that the second particle/defect is electrically isolated from the pixel electrode.

12. The repairing method of claim 11, wherein the step of removing the portion area of the pixel electrode above the second particle/defect comprises performing a laser ablation process.