Sensor System and Method

• US 20080108164A1
• Filed: 04/26/2007
• Published: 05/08/2008
• Est. Priority Date: 11/06/2006
• Status: Abandoned Application

• Current Assignee: BioWarn LLC (KKR & Co., Inc.)
• Original Assignee: BioWarn LLC (KKR & Co., Inc.)
• Inventors: Oleynik, Vladislav A.
• Application Number:
  US11/740,421
• Publication Number:
  US 20080108164A1
• Time in Patent Office: Days
• US Class Current: 438/49
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

A sensor system and method for detecting the presence of one or more target substances reacting with one or more target recognition element types for producing an electrical charge detectable by a differential pair of field effect transistors that provide increased sensitivity by minimizing common mode effects on the differential pair. The differential pair is controlled by optimization algorithms in a digital signal processor that reads and store electrical characteristics of the differential pair and maintains the differential pair at optimal operating points based on continuously monitoring the differential pair. One or more target recognition element types are disbursed over a sensor gate area of the differential pair that detects one or more signature signals created by the binding of one or more target substances and the target recognition element types. The detected signature signals are compared with a library of stored signature signals for determining the identity of the target substances.

Claims

1. A sensor method for detecting one or more target substances, comprising:

providing a differential pair of field effect transistors comprising;

a reference field effect transistor having a reference gate area, wherein the reference gate area is covered to prevent contact of the reference gate area with the one or more target substances; and

a sensor field effect transistor having a sensor channel and a sensor gate area, wherein the sensor gate area is exposed, and wherein the sensor gate area is provided with one or more target recognition element types to react with the one or more target substances;

wherein the reference field effect transistor and the sensor field effect transistor have a common substrate and a common source connection, the differential pair of field effect transistors operably connected to a common current source and a digital signal processor;

obtaining a differential output signature signal from;

a common mode signal obtained from the reference field effect transistor, and

a sensor output signature signal obtained from the sensor field effect transistor;

balancing the differential output signal signature of the differential pair of field effect transistors by controlling, at the digital signal processor, the common current source;

monitoring the differential output signal signature of the differential pair of field effect transistors to detect the one or more target substances; and

notifying a user of the detection.

4. The sensor method of claim 1, wherein the differential pair of field effect transistors are in close proximity to one another on the common substrate for minimizing differences in environmental and electrical influences between both field effect transistors in the differential pair.

5. The sensor method of claim 1, wherein the step of balancing further comprises controlling the operating characteristics of the differential pair by the digital signal processor by controlling a common substrate voltage and a quiescent drain voltage of the reference field effect transistor based on the optimization algorithms.

6. The sensor method of claim 1, further comprising providing a temperature sensor and a heating element on a single silicon substrate with the differential pair of field effect transistors.

7. The sensor method of claim 6, further comprising reading the temperature sensor signal and controlling a temperature of the single silicon substrate by controlling a signal to the heating element by the digital signal processor.

8. The sensor method of claim 7, further comprising the steps of self-cleaning the sensor gate area and maintaining a stable temperature during normal sensing operations by controlling the temperature sensor and the heating means by the digital signal processor.

9. The sensor method of claim 1, wherein the one or more target recognition element types comprises a first target recognition element type for reacting with only a first target types for producing a time-varying signature output signal from the sensor field effect transistor and the reference field effect transistor of the differential pair, the time-varying signature output signal for identifying and distinguishing the reaction of the first target recognition element type with the first target type from other reactions by the characteristics of the time-varying signature output signal.

10. The sensor method of claim 9, wherein the time-varying signature output signal comprises an amplitude and a plurality of frequencies.

11. The sensor method of claim 10, further comprising providing a plurality of stored time-varying signature output signals in a memory of the digital signal processor, comparing the plurality of stored time-varying signal output signals with the time-varying signature output signal and identifying the first target type.

12. The sensor method of claim 1, wherein the one or more target recognition element types comprise a first target recognition element type and a second target recognition element types and the one or more target substances comprise a first target type and a second target type, the method further comprising reacting the first target recognition element type disbursed over the sensor gate area with the first target type and reacting the second target recognition element type disbursed over the sensor gate area with the second target type for producing a time-varying, superimposed first and second output signature signal from the sensor field effect transistor and reference field effect transistors of the differential pair, the first and second output signature signals each having characteristics that identify and distinguish the first output signature signal from the second output signature signal and the first and second output signature signal from other reactions.

13. The sensor method of claim 12, further comprising including in the digital signal processor a memory having a plurality of stored output signature signals for comparing with the measured superimposed first and second output signature signals and identifying the first and second target types.

14. The sensor method of claim 1, wherein the one or more target recognition element types is selected from the group consisting of proteins, nucleic acids, inorganic molecules and organic molecules.

15. The sensor method of claim 1, wherein the one or more target recognition element types is selected from the group consisting of antibodies, antibody fragments, oligonucleotides, DNA, RNA, aptamers, enzymes, cell fragments receptors, bacteria, bacterial fragments, viruses and viral fragments.

16. The sensor method of claim 1, wherein the one or more target recognition element types is selected from the group consisting of molecules, compounds, complexes, nucleic acids, proteins, viruses, bacteria, bacterial fragments, cells, cell fragments, inorganic molecules and organic molecules.

17. The sensor method of claim 7, further comprising using the heating element to heat the sensor gate area to a temperature of between about 35°

Celsius and about 80°

Celsius to self-clean the sensor gate to allow for reuse of the sensor system.

21. The sensor method of claim 1, wherein the reference field effect transistor is located adjacent to the sensor field effect transistor on the common substrate without any other intervening field effect transistor located between the reference field effect transistor and the sensor field effect transistor.

2. A sensor method for detecting one or more target substances, comprising:

monitoring parameters of the differential pair of field effect transistors, the differential pair of field effect transistors comprising;

a reference field effect transistor having a reference gate area, wherein the reference gate area is covered to prevent contact of the reference gate area with the one or more target substances; and

a sensor field effect transistor having a sensor channel and a sensor gate area, wherein the sensor gate area is exposed, and wherein the sensor gate area is provided with one or more target recognition element types to react with the one or more target substances;

wherein the reference field effect transistor and the sensor field effect transistor have a common substrate and a common source connection;

controlling operating characteristics of the differential pair of field effect transistors by a digital signal processor to an optimum operating range for signal sensing;

obtaining a differential output signature signal from;

a common mode signal obtained from the reference field effect transistor; and

a sensor output signature signal obtained from the sensor field effect transistor; and

monitoring the differential output signal signature of the differential pair of field effect transistors to detect the one or more target substances.

3. (canceled)

18. A method of using a sensor array comprising two or more sensors for detecting one or more target substances, comprising.

providing a first differential pair of field effect transistors of a first sensor of the sensor array comprising:

a first reference field effect transistor having a reference gate area, wherein the reference gate area is covered to prevent contact of the reference gate area with the one or more tare substances; and

a first sensor field effect transistor having a sensor channel and a sensor gate area, wherein the sensor gate area is exposed, and wherein the sensor gate area is provided with one or more target recognition element types to react with the one or more target substances;

wherein the first reference field effect transistor and the first sensor field effect transistor have a common substrate and a common source connection;

obtaining a first differential output signature signal from;

a common mode signal obtained from the first reference field effect transistor; and

a sensor output signature signal obtained from the first sensor field effect transistor;

monitoring the first differential output signal signature of the first differential pair of field effect transistors to detect the one or more target substances;

providing a second differential pair of field effect transistors of a second sensor of the sensor array comprising;

a second reference field effect transistor having a reference gate area, wherein the reference gate area is covered to prevent contact of the reference gate area with the one or more target substances; and

a second sensor field effect transistor having a sensor channel and a sensor gate area, wherein the sensor gate area is exposed, and wherein the sensor gate area is provided with one or more target recognition element types to react with the one or more target substances;

wherein the second reference field effect transistor and the second sensor field effect transistor have a common substrate and a common source connection;

obtaining a second differential output signature signal from;

a common mode signal obtained from the second reference field effect transistor, and

a sensor output signature signal obtained from the second sensor field effect transistor; and

monitoring the second differential output signal signature of the second differential pair of field effect transistors to detect the one or more target substances.

19. The sensor method of claim 18, further comprising detecting a presence of two or more target substances using two more sensors within the sensor array.

20. The sensor method of claim 19, further comprising detecting the presence of a first target type using the first sensor within the sensor array and detecting the presence of a second target type using the second sensor within the sensor array.