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HIGH VOLTAGE VERTICALLY ORIENTED EEPROM DEVICE

  • US 20080108212A1
  • Filed: 10/19/2006
  • Published: 05/08/2008
  • Est. Priority Date: 10/19/2006
  • Status: Abandoned Application
First Claim
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1. An EEPROM device structure, comprising:

  • a semiconductor substrate body having a surface MOSFET with a body portion and being formed in an upper region of the substrate body;

    a vertical trench-filled polysilicon floating gate that is formed in a trench in a lower region of the substrate body adjacent to a current path of said surface MOSFET body portion, said vertical trench-filled polysilicon gate being isolated by dielectric material from the body portion of said surface MOSFET, wherein one side of the vertical trench-filled polysilicon gate is adjacent to the surface MOSFET body portion of said substrate; and

    a memory word line region that is formed in the lower region of the substrate body adjacent to another side of the vertical trench-filled polysilicon gate and that is isolated from the vertical trench-filled polysilicon gate by dielectric material, whereby leakage of the surface MOSFET from the current path is stored using the polysilicon floating gate.

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