Patterning methods
First Claim
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1. A patterning method, comprising:
- providing a substrate having an insulator layer established thereon, and a silicon layer established on the insulator layer;
establishing a mask on at least a portion of the silicon layer;
removing portions of the silicon layer and the insulator layer to expose portions of the substrate, whereby the silicon layer and insulator layer covered by the mask remain on the substrate;
wet-etching the insulator layer at exposed areas, whereby a height of the insulator layer remains substantially unchanged; and
removing the mask and the remaining silicon layer.
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Abstract
A patterning method includes providing a substrate having an insulator layer established thereon. A silicon layer is established on the insulator layer. A mask is established on at least a portion of the silicon layer. Portions of the silicon layer and the insulator layer are removed to expose portions of the substrate, whereby the silicon layer and insulator layer covered by the mask remain on the substrate. The insulator layer is wet-etched at exposed areas, whereby a height of the insulator layer remains substantially unchanged. The mask and remaining silicon layer are removed.
11 Citations
20 Claims
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1. A patterning method, comprising:
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providing a substrate having an insulator layer established thereon, and a silicon layer established on the insulator layer; establishing a mask on at least a portion of the silicon layer; removing portions of the silicon layer and the insulator layer to expose portions of the substrate, whereby the silicon layer and insulator layer covered by the mask remain on the substrate; wet-etching the insulator layer at exposed areas, whereby a height of the insulator layer remains substantially unchanged; and removing the mask and the remaining silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A structure, comprising:
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a substrate; and at least one insulating structure established on the substrate, the insulating structure having had a silicon layer established thereon during an HF wet-etching process and subsequently removed, the silicon layer enabling a height of the insulating structure to remain substantially unchanged during the HF wet-etching process. - View Dependent Claims (17)
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18. A patterning method, comprising:
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establishing an insulator layer on a substrate, the insulator layer having a predetermined height; establishing a silicon layer on the insulator layer; establishing a mask on at least a portion of the silicon layer, thereby forming a pattern; removing portions of the silicon layer and the insulator layer not covered by the mask, thereby exposing portions of the substrate and transferring the pattern to the silicon layer and the insulator layer; HF wet-etching the insulator layer at exposed areas, whereby the predetermined height of the insulator layer remains substantially unchanged, and a width of the insulator layer decreases; removing the mask; and removing the remaining silicon layer, thereby exposing the etched insulator layer. - View Dependent Claims (19, 20)
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Specification