Manufacturing Method of Semiconductor Device

• US 20080108229A1
• Filed: 10/23/2007
• Published: 05/08/2008
• Est. Priority Date: 10/26/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tanaka, Koichiro, Yamazaki, Shunpei
• Granted Patent: US 7,767,595 B2
• Time in Patent Office: Days
• US Class Current: 438/795
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 26/0613 having a common axis B23K26/0619 takes precedence
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.

Claims

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first material layer;

forming a second material layer over the first material layer; and

irradiating the first material layer and the second material layer with a first laser beam and a second laser beam to remove at least a region of the second material layer,

wherein the first laser beam is absorbed by at least the first material layer,

wherein the second laser beam is absorbed by at least the second material layer, and

wherein the first laser beam and the second laser beam overlap at the region.

2. The manufacturing method of a semiconductor device according to claim 1, wherein a wavelength of the first laser beam is longer than a wavelength of the second laser beam.

3. The manufacturing method of a semiconductor device according to claim 1,

wherein a second harmonic wave emitted from a YAG laser is used as the first laser beam, and

wherein a third harmonic wave emitted from the YAG laser is used as the second laser beam.

4. The manufacturing method of a semiconductor device according to claim 1, wherein a beam spot area S1 of the first laser beam at the region and a beam spot area S2 of the second laser beam at the region satisfy a relation S1<

S2.

5. The manufacturing method of a semiconductor device according to claim 1, wherein a beam diameter W1 of the first laser beam at the region and a beam diameter W2 of the second laser beam at the region satisfy a relation W1<

W2.

6. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first material layer;

forming a second material layer over the first material layer; and

irradiating the first material layer and the second material layer with a first laser beam and a second laser beam to remove at least a region of the second material layer,

wherein an oscillation wavelength of the first laser beam is in an absorption wavelength range of the first material layer,

wherein an oscillation wavelength of the second laser beam is in an absorption wavelength range of the second material layer, and

wherein the first laser beam and the second laser beam overlap at the region.

7. The manufacturing method of a semiconductor device according to claim 6, wherein a wavelength of the first laser beam is longer than a wavelength of the second laser beam.

8. The manufacturing method of a semiconductor device according to claim 6,

wherein a second harmonic wave emitted from a YAG laser is used as the first laser beam, and

wherein a third harmonic wave emitted from the YAG laser is used as the second laser beam.

9. The manufacturing method of a semiconductor device according to claim 6, wherein a beam spot area S1 of the first laser beam at the region and a beam spot area S2 of the second laser beam at the region satisfy a relation S1<

S2.

10. The manufacturing method of a semiconductor device according to claim 6, wherein a beam diameter W1 of the first laser beam at the region and a beam diameter W2 of the second laser beam at the region satisfy a relation W1<

W2.

11. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first material layer;

forming a second material layer over the first material layer; and

irradiating the first material layer and the second material layer with a first laser beam and a second laser beam to remove at least a region of the second material layer,

wherein the first laser beam has an oscillation wavelength of 400 nm or longer,

wherein the second laser beam has an oscillation wavelength of 400 nm or shorter, and

wherein the first laser beam and the second laser beam overlap at the region.

12. The manufacturing method of a semiconductor device according to claim 11,

wherein the oscillation wavelength of the first laser beam is in an absorption wavelength range of the first material layer, and

wherein the oscillation wavelength of the second laser beam is in an absorption wavelength range of the second material layer.

13. The manufacturing method of a semiconductor device according to claim 11,

wherein a second harmonic wave emitted from a YAG laser is used as the first laser beam, and

wherein a third harmonic wave emitted from the YAG laser is used as the second laser beam.

14. The manufacturing method of a semiconductor device according to claim 11, wherein a beam spot area S1 of the first laser beam at the region and a beam spot area S2 of the second laser beam at the region satisfy a relation S1<

S2.

15. The manufacturing method of a semiconductor device according to claim 11, wherein a beam diameter W1 of the first laser beam at the region and a beam diameter W2 of the second laser beam at the region satisfy a relation W1<

W2.