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High Efficiency Light-Emitting Diodes

  • US 20080111123A1
  • Filed: 10/08/2005
  • Published: 05/15/2008
  • Est. Priority Date: 10/08/2004
  • Status: Abandoned Application
First Claim
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1. An LED structure comprising the following layers:

  • a) n-type GaP substrateb) AlxGa1-xP buffer layer n-type or undopedc) AlyGa1-yP holes-leakage-preventing layer, n-type or undopedd) a plurality of the following-layers;

    AlzGa1-zP barrier/AlnInmGa1-m-nNcAsvSbkP1-c-v-k active layer n- or p-type or undoped, ande) InwAlsGa1-s-wP cap/contact layer p-type or undoped

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