INTEGRATED CIRCUIT DEVICE AND METHOD OF PRODUCING THE SAME
First Claim
1. An integrated circuit device comprising a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, wherein the via is formed of one or more cylindrical structures made up of carbon atoms.
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Abstract
An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms. The latter device is preferably manufactured by a method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions. A semiconductor device using a carbon nanotube and a method of forming a pattern using a carbon nanotube as a mask are also disclosed.
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Citations
91 Claims
- 1. An integrated circuit device comprising a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, wherein the via is formed of one or more cylindrical structures made up of carbon atoms.
- 18. An integrated circuit device comprising a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, wherein at least part of the wiring members are formed of one or more cylindrical structures made up of carbon atoms.
- 36. A method of producing an integrated circuit device comprising a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, wherein at least part of the wiring members are formed of one or more cylindrical structures made up of carbon atoms, the method comprising using a CVD process for the formation of the cylindrical structures, while applying a direct current electric field so as to grow the cylindrical structures in one direction, or applying an alternating current electric field so as to grow the cylindrical structures in two directions.
- 39. A semiconductor device, which comprises a cylindrical multilayer structure composed of carbon elements, the structure comprising an inner cylinder member having semiconductor-like characteristics and an outer cylinder member having metallic characteristics, and the electric conductivity of said inner cylinder member of said multilayer structure being controlled by a voltage applied to said outer cylinder member.
- 71. A field effect transistor comprising a source for supplying carriers, a drain for receiving said carriers, and a gate constituting a current control electrode for controlling the current flowing through a channel making up a current path between said source and said drain, by changing the conductivity of said channel, wherein said gate is formed of a metallic carbon nanotube.
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81. A method of fabricating a field effect transistor comprising a source for supplying carriers, a drain for receiving said carriers and a gate constituting a current control electrode for controlling the current flowing through a channel making up a current path between said source and said drain, by changing the conductivity of said channel, said gate being formed of a metallic carbon nanotube,
wherein the gate of the carbon nanotube is grown by a CVD method in the presence of an electric field applied.
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88. A method of forming a micro pattern, comprising:
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arranging a carbon nanotube on a substrate; and
transferring the shape of said carbon nanotube to said substrate by dry etching using said carbon nanotube as a mask, thereby patterning said substrate. - View Dependent Claims (89, 90, 91)
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Specification