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LOW TEMPERATURE ALD SiO2

  • US 20080113097A1
  • Filed: 11/14/2006
  • Published: 05/15/2008
  • Est. Priority Date: 11/14/2006
  • Status: Active Grant
First Claim
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1. A silicon dioxide deposition method, comprising:

  • (a) positioning at least one substrate in a chamber;

    (b) exposing the at least one substrate to a silicon precursor;

    (c) exposing the at least one substrate to a pyridine soak; and

    (d) exposing the at least one substrate to an oxidizing source.

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