Method of fabricating GaN device with laser
First Claim
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1. A method of fabricating a gallium nitride (GaN) device with laser, comprising steps of:
- (a) obtaining a substrate and growing a buffer layer, an n-type GaN and a p-side up GaN to obtain an epitaxy structure;
(b) bonding said epitaxy structure to bond with another substrate by using a bonding layer and defining a grain with laser;
(c) lifting off said substrate stripped out by laser illumination and etching said buffer layer to roughen a surface of said buffer layer; and
(d) deposing a dielectric layer on said grains and said buffer layer and etching out an n-type electrode to obtain a grain of thin film light emitting diode (LED) structure.
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Abstract
A laser is used in fabricating a thin film gallium nitride (GaN) light emitting diode (LED). The laser has a wave length to be absorbed by GaN. The laser is used to define a GaN grain. And the laser is used to lift off a substrate after obtaining a bonding layer of GaN. Fabrication procedure is thus simplified.
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Citations
15 Claims
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1. A method of fabricating a gallium nitride (GaN) device with laser, comprising steps of:
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(a) obtaining a substrate and growing a buffer layer, an n-type GaN and a p-side up GaN to obtain an epitaxy structure; (b) bonding said epitaxy structure to bond with another substrate by using a bonding layer and defining a grain with laser; (c) lifting off said substrate stripped out by laser illumination and etching said buffer layer to roughen a surface of said buffer layer; and (d) deposing a dielectric layer on said grains and said buffer layer and etching out an n-type electrode to obtain a grain of thin film light emitting diode (LED) structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a GaN device with laser, comprising steps of:
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(a) obtaining a substrate and growing a buffer layer, an n-type GaN and a p-side up gallium nitride (GaN) to obtain an epitaxy structure and defining a grain with laser; (b) bonding said epitaxy structure to bond with another substrate by using a bonding layer; (c) lifting off said substrate striiped out by stripped out by laser illumination and etching said buffer layer to roughen a surface of said buffer layer; and (d) deposing a dielectric layer on said grains and said buffer layer and etching out a n n-type electrode to obtain a grain of thin film LED structure.
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Specification