METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
First Claim
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1. A method for growing an N-face group III nitride film, comprising:
- (a) providing a substrate having a growth surface with a misorientation angle between 0.5 and 10 degrees relative to a miller indexed crystallographic plane [h, i, k, l] of the substrate, where h, i, k, l are miller indices; and
(b) growing the N-face group III-nitride film on the growth surface, wherein the N-face group III-nitride film is smoother than an N-face group III-nitride film grown on a substrate without a misorientation angle.
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Abstract
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
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Citations
22 Claims
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1. A method for growing an N-face group III nitride film, comprising:
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(a) providing a substrate having a growth surface with a misorientation angle between 0.5 and 10 degrees relative to a miller indexed crystallographic plane [h, i, k, l] of the substrate, where h, i, k, l are miller indices; and (b) growing the N-face group III-nitride film on the growth surface, wherein the N-face group III-nitride film is smoother than an N-face group III-nitride film grown on a substrate without a misorientation angle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for creating a group III-nitride film with an abrupt p-type doping profile, comprising
(a) providing a substrate having a growth surface with a misorientation angle between 0.5 and 10 degrees relative to a miller indexed crystallographic plane [h, i, k, l] of the substrate, where h, i, k, l are miller indices; - and
(b) growing the N-face group III-nitride film having an abrupt p-type doping profile on the growth surface, wherein the group III-nitride film having an N-face is smoother than an N-face group III-nitride film grown on a substrate without a misorientation angle.
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22. A method for enhancing charge transport properties of a nitride device, comprising:
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fabricating the nitride device using N-face nitride layers grown on a substrate having a growth surface with a misorientation angle between 0.5 and 10 degrees relative to a miller indexed crystallographic plane [h, i, k, l] of the substrate, where h, i, k, l are miller indices; and aligning a channel of the nitride device substantially perpendicular to a misorientation direction of the misoriented N-face (Al,Ga,In)N layer grown on a misoriented substrate, wherein charge transport properties are enhanced in the misorientation direction.
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