GAP-FILL DEPOSITIONS INTRODUCING HYDROXYL-CONTAINING PRECURSORS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS

• US 20080115726A1
• Filed: 11/16/2007
• Published: 05/22/2008
• Est. Priority Date: 08/27/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ingle, Nitin K., Banthia, Vikash, Bang, Won B., Xia, Xinyun, Wong, Shan, Wang, Yen-Kun V.
• Application Number:
  US11/941,793
• Publication Number:
  US 20080115726A1
• Time in Patent Office: Days
• US Class Current: 118/696
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31625 Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/76837 Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

Abstract

A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

Claims

1. A substrate processing apparatus comprising:

a substrate support configured to support a substrate within a processing chamber;

a gas delivery system configured to receive a silicon-containing precursor, a hydroxyl-containing precursor and an oxidizing processing gas and deliver them to the processing chamber; and

a controller configured to control the gas delivery system and the substrate support, wherein the controller introduces the silicon-containing precursor, the hydroxyl-containing precursor and oxidizing processing gas into the processor chamber to form a dielectric layer on the substrate, and alter the position of the substrate support relative to the gas delivery system during the deposition of the dielectric layer.

2. The substrate processing chamber of claim 1, wherein the controller varies the concentration of the silicon-containing precursor to the oxidizing processing gas over time during the deposition of the dielectric layer on the substrate, as the silicon-containing precursor gas is continuously flowed into the chamber.

3. The substrate processing chamber of claim 1, wherein the controller moves the substrate support closer to the gas delivery system during the deposition of the dielectric layer to increase a deposition rate for the dielectric layer.

4. The substrate processing chamber of claim 1, wherein the gas delivery system comprises separate channels to deliver the silicon-containing precursor and the hydroxyl-containing precursor to the processing chamber.

5. The substrate processing chamber of claim 1, wherein the silicon-containing precursor comprises tetraethylorthosilicate (TEOS), the hydroxyl-containing precursor comprises H₂O, and the oxidizing processing gas comprises ozone.