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Plasma Processing Apparatus

  • US 20080115728A1
  • Filed: 02/22/2006
  • Published: 05/22/2008
  • Est. Priority Date: 02/28/2005
  • Status: Abandoned Application
First Claim
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1. A plasma processing apparatus which includes:

  • a cylindrical vacuum chamber;

    exhaust means connected to said vacuum chamber;

    a supporting table disposed in the vacuum chamber and supporting a substrate;

    a main supply nozzle disposed over said supporting table inside said vacuum chamber, and feeding a main source gas with the tip end thereof directed to an axial center portion of the vacuum chamber;

    an auxiliary supply nozzle disposed over said supporting table inside said vacuum chamber, and feeding sub-source gas and rare gas with the tip end thereof directed to the axial center portion of said vacuum chamber;

    a ring-shaped high-frequency antenna disposed in an upper portion of said vacuum chamber, coaxially with said vacuum chamber;

    power feeding means for antenna connected to said high-frequency antenna, and causing electromagnetic waves to be outputted from said high-frequency antenna;

    a bias electrode plate disposed inside said supporting table; and

    high-frequency bias power feeding means connected to said bias electrode plate, and causing a self-bias potential to occur in said substrate,the plasma processing apparatus characterized by comprising;

    lifting-and-lowering means which lifts up and down said supporting table; and

    controlling means which,when a size of said substrate to be placed on said supporting table is instructed,reads out a uniform sputter-etching map, recorded as being associated with the above-mentioned size of substrate, and showing a uniform sputter-etching possible region based on the relationship between;

    the size Dp of a center diameter, which is between the outer diameter and the inner diameter, of a ring-shaped high-density plasma region formed along said high-frequency antenna; and

    the height H from said center of said high-density plasma region to the bottom of the plasma diffusion region inside the vacuum chamber;

    concurrently, obtains, on the basis of the internal pressure of said vacuum chamber and the frequency of electromagnetic waves to be produced from said high-frequency antenna, the height Hp between said center of said high-density plasma region and the upper surface inside said vacuum chamber, and also obtains a value of said Dp, meanwhile, said controlling means obtains, on the basis of the internal pressure of said vacuum chamber and the magnitude of the self-bias potential to be produced in said substrate, the height Hs between the bottom portion of said plasma diffusion region and the top surface of said supporting table;

    after that, obtains on the basis of the above-mentioned value of Dp, the above-mentioned value of Hp and the above-mentioned value of Hs, a value of said H in a uniform sputter-etching possible region from said read-out map;

    and then controls said lifting-and-lowering means and lifts up and down said supporting table so that H can have the above-mentioned value.

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