Stencil design and method for cell projection particle beam lithography

• US 20080116397A1
• Filed: 11/21/2006
• Published: 05/22/2008
• Est. Priority Date: 11/21/2006
• Status: Active Grant

• Current Assignee: Advantest Corporation
• Original Assignee: Cadence Design Systems Incorporated (Cadence Group)
• Inventors: Matsushita, Shohei, Yoshida, Kenji, Mitsuhashi, Takashi, Fujimura, Akira
• Granted Patent: US 7,772,575 B2
• Time in Patent Office: Days
• US Class Current: 250/492.22
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

Claims

1. A method for particle beam lithography comprising:

selecting one of a plurality of cell patterns from a stencil mask; and

partially exposing the cell pattern to a particle beam so as to selectively project a portion of the cell pattern on a substrate.

2. The method of claim 1, wherein particle beam lithography comprises electron beam (EB) lithography, and wherein the particle beam comprises an electron beam.

3. The method of claim 1, wherein particle beam lithography comprises optical (light) laser lithography, and wherein the particle beam comprises an optical (light) laser beam.

4. The method of claim 1, wherein particle beam lithography comprises X-ray beam lithography, and wherein the particle beam comprises an X-ray beam.

5. The method of claim 1, wherein each cell pattern comprises an aperture formed in the stencil mask.

6. The method of claim 1, wherein each cell pattern comprises a stencil pattern indicative of an electronic circuit block.

7. The method of claim 6, wherein the electronic circuit block is a cell in the standard cell library including an inverter, a flip-flop, a logic gate or a memory cell.

8. The method of claim 1, wherein the cell pattern in the stencil mask includes at least two independently usable block patterns adjoining each other in a single cell area.

9. The method of claim 8, wherein the cell patterns comprise a rectangular, triangular, rectilinear, or polygonal shape or contour.

10. The method of claim 8, wherein open space is secured surrounding adjoined block patterns, and wherein the open space includes a margin large enough to allow partial projection of at least one of the independent block patterns selectively.

11. The method of claim 8, wherein those independently usable block patterns are arranged to adjoin each other either in a vertical direction or in a horizontal direction in the cell area.

12. The method of claim 8, wherein the independently usable block patterns are arranged to adjoin each other in both vertical and horizontal directions.

13. The method of claim 1, wherein the cell pattern in the stencil mask includes at least one block pattern and a plurality of repetitive patterns.

14. The method of claim 13, wherein the plurality of repetitive patterns cyclically repeat.

15. The method of claim 13, wherein the portion of the cell pattern projected on the substrate includes the at least one block pattern and at least one repetitive pattern.

16. The method of claim 13, wherein open space is secured surrounding the adjoined block pattern and repetitive pattern in the stencil mask, and wherein the open space includes a margin large enough to allow partial projection of at least one block pattern and the designated portion of the repetitive pattern.

17. A method for particle beam lithography comprising:

projecting a particle beam through a first aperture that defines an exposure area;

directing the particle beam through a second aperture that defines a cell pattern; and

selectively projecting a portion of the cell pattern on a substrate by using the first aperture as a mask to limit the exposure area of the second aperture to thereby partially expose the cell pattern to the particle beam.

18. The method of claim 17, wherein particle beam lithography comprises electron beam (EB) lithography, and wherein the particle beam comprises an electron beam.

19. The method of claim 17, wherein particle beam lithography comprises optical (light) laser lithography, and wherein the particle beam comprises an optical (light) laser beam.

20. The method of claim 17, wherein particle beam lithography comprises X-ray beam lithography, and wherein the particle beam comprises an X-ray beam.

21. The method of claim 17, wherein the first aperture is formed in an exposure mask.

22. The method of claim 17, wherein the first aperture comprises a rectangular aperture.

23. The method of claim 17, wherein the second aperture is formed in a stencil mask.

24. The method of claim 17, wherein the second aperture or cell pattern is one of a plurality of second apertures or cell patterns formed in the stencil mask.

25. The method of claim 17, wherein the cell pattern in the stencil mask includes at least two independently usable block patterns adjoining each other in a single cell area.

26. The method of claim 25, wherein the cell patterns comprise a rectangular, triangular, or rectilinear shape or contour.

27. The method of claim 25, wherein open space is secured surrounding the adjoined block patterns, and wherein the open space includes a margin large enough to allow partial projection of one of the independent block patterns selectively.

28. The method of claim 25, wherein the independently usable block patterns are arranged to adjoin each other either in a vertical direction or in a horizontal direction in the cell area.

29. The method of claim 25, wherein the independently usable block patterns are arranged to adjoin each other in both vertical and horizontal directions.

30. The method of claim 17, wherein the cell pattern in the stencil mask includes at least one block pattern and a plurality of repetitive patterns.

31. The method of claim 30, wherein the plurality of repetitive patterns cyclically repeat.

32. The method of claim 30, wherein the portion of the cell pattern projected on the substrate includes the at least one block pattern and at least one repetitive pattern.

33. The method of claim 30, wherein open space is secured surrounding the adjoined block patterns and repetitive pattern in the stencil mask, and wherein the open space includes a margin large enough to allow partial projection of one block pattern and the designated portion of the repetitive pattern.

34. A system for particle beam lithography comprising:

a particle beam source; and

a stencil mask having an aperture that defines a cell pattern,

wherein selectively exposing a portion of the cell pattern to the particle beam source forms a partial image of the cell pattern on a substrate.

35. The system of claim 34, wherein particle beam lithography comprises electron beam (EB) lithography, and wherein the particle beam source comprises an electron beam source.

36. The system of claim 34, wherein particle beam lithography comprises optical (light) laser lithography, and wherein the particle beam source comprises an optical (light) laser beam source.

37. The system of claim 34, wherein particle beam lithography comprises X-ray beam lithography, and wherein the particle beam source comprises an X-ray beam source.

38. The system of claim 34, wherein the cell pattern in the stencil mask includes at least two independently usable block patterns adjoining each other in a single cell area.

39. The system of claim 38, wherein the cell patterns comprise a rectangular, triangular, rectilinear, or polygonal shape or contour.

40. The system of claim 38, wherein open space is secured surrounding adjoined block patterns, and wherein the open space includes a margin large enough to allow partial projection of at least one of the independent block patterns selectively.

41. The system of claim 38, wherein those independently usable block patterns are arranged to adjoin each other either in a vertical direction or in a horizontal direction in the cell area.

42. The system of claim 38, wherein the independently usable block patterns are arranged to adjoin each other in both vertical and horizontal directions.

43. The system of claim 34, wherein the cell pattern in the stencil mask includes at least one block pattern and a plurality of repetitive patterns.

44. The system of claim 43, wherein the plurality of repetitive patterns cyclically repeat.

45. The system of claim 43, wherein the portion of the cell pattern projected on the substrate includes the at least one block pattern and at least one repetitive pattern.

46. The system of claim 43, wherein open space is secured surrounding the adjoined block pattern and repetitive pattern in the stencil mask, and wherein the open space includes a margin large enough to allow partial projection of at least one block pattern and the designated portion of the repetitive pattern.

47. A system for particle beam lithography comprising:

a particle beam source;

a first mask positioned for exposure to the particle beam source, the first mask having a first aperture that defines an exposure area; and

a second mask positioned below the first mask and above a substrate, the second mask having a second aperture that defines a cell pattern,

wherein exposing the particle beam source to the first aperture and selectively exposing the particle beam source to the second aperture forms a partial image of the cell pattern on the substrate.

48. The system of claim 47, wherein particle beam lithography comprises electron beam (EB) lithography, and wherein the particle beam source comprises an electron beam source.

49. The system of claim 47, wherein particle beam lithography comprises optical (light) laser lithography, and wherein the particle beam source comprises an optical (light) laser beam source.

50. The system of claim 47, wherein particle beam lithography comprises X-ray beam lithography, and wherein the particle beam source comprises an X-ray beam source.

51. The system of claim 47, wherein the cell pattern in the stencil mask includes at least two independently usable block patterns adjoining each other in a single cell area.

52. The system of claim 51, wherein the cell patterns comprise a rectangular, triangular, rectilinear, or polygonal shape or contour.

53. The system of claim 51, wherein open space is secured surrounding adjoined block patterns, and wherein the open space includes a margin large enough to allow partial projection of at least one of the independent block patterns selectively.

54. The system of claim 51, wherein those independently usable block patterns are arranged to adjoin each other either in a vertical direction or in a horizontal direction in the cell area.

55. The system of claim 51, wherein the independently usable block patterns are arranged to adjoin each other in both vertical and horizontal directions.

56. The system of claim 47, wherein the cell pattern in the stencil mask includes at least one block pattern and a plurality of repetitive patterns.

57. The system of claim 56, wherein the plurality of repetitive patterns cyclically repeat.

58. The system of claim 56, wherein the portion of the cell pattern projected on the substrate includes the at least one block pattern and at least one repetitive pattern.

59. The system of claim 56, wherein open space is secured surrounding the adjoined block pattern and repetitive pattern in the stencil mask, and wherein the open space includes a margin large enough to allow partial projection of at least one block pattern and the designated portion of the repetitive pattern.

60. A stencil for particle beam lithography comprising:

a plurality of cell patterns, each cell pattern having a plurality of exposure areas within a cell area that are individually selectable;

wherein exposing a first exposure area of a first cell pattern to a particle beam selectively projects a first image of at least a portion of the first cell pattern on a substrate, and

wherein exposing a second exposure area of the first cell pattern, that is different from the first exposure area, to a particle beam selectively projects a second image of at least another portion of the first cell pattern, that is different than the first image, on the substrate.

61. The stencil of claim 60, wherein particle beam lithography comprises electron beam (EB) lithography, and wherein the particle beam comprises an electron beam.

62. The stencil of claim 60, wherein particle beam lithography comprises optical (light) laser lithography, and wherein the particle beam comprises an optical (light) laser beam.

63. The stencil of claim 60, wherein particle beam lithography comprises X-ray beam lithography, and wherein the particle beam comprises an X-ray beam.

64. The stencil of claim 60, wherein each cell pattern includes at least two independently usable block patterns adjoining each other in the cell area.

65. The stencil of claim 64, wherein each cell pattern comprises a rectangular, triangular, or rectilinear shape or contour so that each cell pattern is configured to mate to each other.

66. The stencil of claim 64, wherein open space is secured surrounding the adjoined block patterns, and wherein the open space includes a margin large enough to allow partial projection of at least one of the independent block patterns selectively.

67. The stencil of claim 64, wherein the independently usable block patterns are arranged to adjoin each other either in a vertical direction or in a horizontal direction in the cell area.

68. The stencil of claim 64, wherein the independently usable block patterns are arranged to adjoin each other both in vertical and horizontal directions.

69. The stencil of claim 60, wherein at least one cell pattern includes at least one block pattern and a plurality of repetitive patterns.

70. The stencil of claim 69, wherein the plurality of repetitive patterns cyclically repeat.

71. The stencil of claim 69, wherein the cell pattern projected on the substrate includes the at least one block pattern and at least one repetitive pattern.

72. The stencil of claim 69, wherein open space is secured surrounding the adjoined block pattern and repetitive pattern, and wherein the open space includes a margin large enough to allow partial projection of one block pattern and the designated portion of the repetitive pattern.