PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY AND FABRICATION METHOD THEREOF

• US 20080116787A1
• Filed: 03/09/2007
• Published: 05/22/2008
• Est. Priority Date: 11/17/2006
• Status: Abandoned Application

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Hsu, Shien-Chi, Lin, Chin-Yuan, Lu, Yi-Jun, Hsu, Shu-Ching, Yu, Wei-Sheng
• Application Number:
  US11/684,011
• Publication Number:
  US 20080116787A1
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A pixel structure of active matrix organic light emitting display and method for fabricating the same are provided. In the method, a transparent electrode, an organic light emitting diode, and a reflective electrode are formed on a substrate. Subsequently, at least one switching thin film transistor, at least one driving thin film transistor, a scan line, a data line, and a storage capacitor are formed over the substrate.

Claims

1. A fabrication method for a pixel structure of active matrix organic light emitting display (AMOLED), comprising:

(a) forming an organic light emitting diode (OLED) on a substrate, comprising a transparent electrode, an organic emitting layer and a reflective electrode, wherein the organic emitting layer is disposed between the transparent electrode and the reflective electrode; and

(b) forming at least one switching thin film transistor (switching TFT), at least one driving thin film transistor (driving TFT), a scan line, a data line and a storage capacitor over the substrate, wherein the switching TFT comprises a first gate, a first source and a first drain, and the first gate is coupled to the scan line, and the first source is coupled to the data line, wherein the driving TFT comprising a second gate, a second source and a second drain, and the second gate is coupled to the first drain, and wherein the storage capacitor is electrically connected to the first drain and the second gate, and the second drain is coupled to the reflective electrode.

2. The method of claim 1, wherein a fabrication method for forming a channel layer of the driving TFT and a channel layer of the switching TFT comprises:

fabricating a silicon layer by inductively coupled plasma chemical vapor deposition (ICP-CVD) ;

and

crystallizing the silicon layer to form a polysilicon layer by excimer laser annealing (ELA).

3. The method of claim 2, wherein fabrication parameters for ICP-CVD comprise:

an operating temperature ranging from 100°

C. to 200°

C.;

an operating pressure ranging from 10 mT to 30 mT; and

reaction gases in a composition ratio of helium to silane ranging from 15;

3 to 25;

3.

4. The method of claim 1, prior to step (a), further comprising forming a color changing medium or a color filter on the substrate.

5. The method of claim 1, wherein the second gate is formed prior to forming the second source and the second drain.

6. The method of claim 1, wherein the second gate is formed after forming the second source and the second drain.

7. The method of claim 1, wherein the transparent electrode, the organic emitting layer and the reflective electrode are formed in sequence.

8. The method of claim 1, after step (a) and before step (b), further comprising forming an insulation layer on the substrate.

9. The method of claim 8, wherein the material of the insulation layer is benzocyclobutene (BCB).

10. The method of claim 8, wherein the step of forming the insulation layer comprises:

forming an insulation material layer over the substrate by spin coating; and

treating the insulation material layer with thermal curing.

11. The method of claim 8, prior to step (b), further comprising forming a buffer layer on the insulation layer.

12. The method of claim 11, wherein the material of the buffer layer is silicon nitride.

13. A pixel structure of an active matrix organic light emitting display, comprising:

a substrate;

an organic light emitting diode disposed on the substrate, comprising;

a transparent electrode;

an organic emitting layer; and

a reflective electrode, wherein the transparent electrode is disposed between the substrate and the organic emitting layer and the organic emitting layer is disposed between the transparent electrode and the reflective electrode;

a scan line disposed above the organic light emitting diode;

a data line disposed above the organic light emitting diode;

at least a switching TFT disposed above the organic light emitting diode, comprising a first gate, a first source and a first drain, wherein the first gate is coupled to the scan line and the first source is coupled to the data line;

at least one driving TFT disposed above the organic light emitting diode and comprising a second gate, a second source, a second drain, wherein the second gate is coupled to the first drain and the second drain is coupled to the reflective electrode; and

a storage capacitor disposed above the organic light emitting diode and electrically connected to the first drain and the second gate.

14. The pixel structure of claim 13, wherein a channel layer of the switching TFT and a channel layer of the driving TFT are formed of a polysilicon layer.

15. The pixel structure of claim 13, further comprising a color changing medium or a color filter disposed between the substrate and the transparent electrode.

16. The pixel structure of claim 13, wherein the second gate is disposed below and between the second source and the second drain.

17. The pixel structure of claim 13, wherein the second gate is disposed above and between the second source and the second drain.

18. The pixel structure of claim 13, further comprising an insulation layer disposed between the organic emitting layer and the driving TFT as well as between the reflective electrode and the driving TFT.

19. The pixel structure of claim 18, wherein the material of the insulation layer is benzocyclobutene (BCB).

20. The pixel structure of claim 18, further comprising a buffer layer disposed between the insulation layer and the driving TFT.

21. The pixel structure of claim 20, wherein the material of the buffer layer is silicon nitride.