Displacement Sensor Using GMR Elements, Angle Sensor Using GMR Elements, And Semiconductor Device Used For Them
First Claim
1. A displacement sensor comprising:
- a sensor element having a first magnetic layer whose magnetization direction is set in a predetermined direction without being influenced by an external magnetic field and a second magnetic layer whose magnetization direction varies against the external magnetic field;
magnetic field generating means for supplying the external magnetic field; and
power supply means for supplying drive voltage to said sensor element;
wherein a change in resistance value of said sensor element proportional to the difference in a magnetized state between a magnetized state of said second magnetic layer and a magnetized stage of said first magnetic layer, which occurs depending on a relative positional relation between said magnetic field generating means and said sensor element, is detected to detect a relative positional relation between said magnetic field generating element and said sensor element,said displacement sensor further comprising suppressing means for suppressing an anisotropic magnetoresistive effect which occurs in said second magnetic layer and which is attributable to an electric current flowing in said sensor element on the basis of said drive voltage.
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Accused Products
Abstract
A highly accurate displacement sensor using GMR elements for detecting a displacement of a physical quantity such as angle is to be provided wherein a waveform distortion of output voltage is diminished.
There are installed at least two Wheatstone bridge circuits having a predetermined angular offset and each comprising a plurality of GMR elements, the GMR elements each having a fixed magnetic layer set to a predetermined magnetization direction. An AC power supply is use as a power supply of the Wheatstone bridge circuits and a displacement of a physical quantity such as a rotational angle is detected on the basis of AC-modulated outputs from the Wheatstone bridge circuits.
An anisotropic self-bias effect of a free magnetic layer in each GMR element can be diminished and hence it is possible to remedy a waveform distortion of an output signal based on the anisotropic self-bias effect of the free magnetic layer.
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Citations
20 Claims
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1. A displacement sensor comprising:
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a sensor element having a first magnetic layer whose magnetization direction is set in a predetermined direction without being influenced by an external magnetic field and a second magnetic layer whose magnetization direction varies against the external magnetic field; magnetic field generating means for supplying the external magnetic field; and power supply means for supplying drive voltage to said sensor element; wherein a change in resistance value of said sensor element proportional to the difference in a magnetized state between a magnetized state of said second magnetic layer and a magnetized stage of said first magnetic layer, which occurs depending on a relative positional relation between said magnetic field generating means and said sensor element, is detected to detect a relative positional relation between said magnetic field generating element and said sensor element, said displacement sensor further comprising suppressing means for suppressing an anisotropic magnetoresistive effect which occurs in said second magnetic layer and which is attributable to an electric current flowing in said sensor element on the basis of said drive voltage. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An angle sensor comprising:
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a stator section having a plurality of giant magnetoresistive elements of a multi-layer structure, said giant magnetoresistive elements each having at least a fixed magnetic layer having a fixed magnetization direction, a non-magnetic conductive layer and a free magnetic layer; and a rotor section adapted to form a magnetic field and rotate in opposition to said stator section, a rotational angle of said rotor section being detected from a change in resistance value caused by the magnetic field provided from said rotor section to said GMR elements, characterized in that at least two Wheatstone bridge circuits having a predetermined angular offset are installed in said stator section, said Wheatstone bridge circuits each comprising a plurality of GMR elements each having a fixed magnetic layer set in a predetermined magnetization direction, an AC power supply is used as a power supply for said Wheatstone bridge circuits, an alternating current is made flow in said plural GMR elements and a rotational angle is detected on the basis of AC-modulated outputs provided from said Wheatstone bridge circuits. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device for a displacement sensor, wherein at least four GMR elements are connected together using conductors to constitute a Wheatstone bridge, the GMR elements being each constituted by a four-layer laminate comprising an antiferromagnetic layer, a fixed magnetic layer (pin magnetic layer), a non-magnetic conductive layer and a free magnetic layer all formed on a semiconductor substrate, power supply terminals of two of the GMR elements that constitute said Wheatstone bridge being connected electrically to an AC power supply, power supply terminals of the remaining two GMR elements being connected electrically to an earth potential section, so that an alternating current is supplied as a bias current to the four GMR elements.
Specification