Probe device

• US 20080116925A1
• Filed: 11/20/2007
• Published: 05/22/2008
• Est. Priority Date: 11/21/2006
• Status: Active Grant

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Sunohara, Masahiro, Higashi, Mitsutoshi
• Granted Patent: US 7,667,474 B2
• Time in Patent Office: Days
• US Class Current: 324/761
• CPC Class Codes: G01R 31/2875 related to heating

Abstract

A probe device includes a stage for fixing a semiconductor device having an external connection pad; a heating unit provided in the stage, for heating the semiconductor device to a predetermined temperature; and a probe card having a probe pin and a support substrate for supporting the probe pin, in which a resistance heating element is provided to the support substrate so as to heat a portion of the support substrate corresponding to a disposition portion of the probe pin to a temperature substantially equal to the predetermined temperature.

Claims

1. A probe device comprising:

a stage for fixing a semiconductor device having an external connection pad;

a heating unit provided in the stage, for heating the semiconductor device to a predetermined temperature;

a probe card having a probe pin and a support substrate for supporting the probe pin, the probe pin being to be brought in contact with the external connection pad of the semiconductor device heated to the predetermined temperature when said probe device performs an electrical inspection of the semiconductor device; and

a resistance heating element provided to the support substrate, for heating a portion of the support substrate corresponding to a disposition portion of the probe pin to a temperature substantially equal to the predetermined temperature.

2. The probe device according to claim 1, further comprising:

a temperature detecting unit provided in the support substrate, for detecting the temperature at the portion of the support substrate corresponding to the disposition portion of the probe pin; and

a power control unit for controlling a power that is applied to the resistance heating element so that the temperature detected by the temperature detecting unit is substantially equal to the predetermined temperature.

3. The probe device according to claim 1, wherein the resistance heating element is provided on a first surface of the support substrate on which the probe pin is disposed and on a second surface of the support substrate opposite the first surface.

4. The probe device according to claim 1, wherein the resistance heating element is a wiring pattern formed by patterning a metallic film.

5. The probe device according to claim 1, wherein a thermal expansion efficient of the support substrate is substantially equal to that of the semiconductor device.