Radar Transceivers

• US 20080117097A1
• Filed: 11/15/2005
• Published: 05/22/2008
• Est. Priority Date: 12/09/2004
• Status: Abandoned Application

• Current Assignee: Dirk Steinbuch, Thomas Walter
• Original Assignee: Dirk Steinbuch, Thomas Walter
• Inventors: Steinbuch, Dirk, Walter, Thomas
• Application Number:
  US11/792,648
• Publication Number:
  US 20080117097A1
• Time in Patent Office: Days
• US Class Current: 342/175
• CPC Class Codes: G01S 13/931 of land vehicles
• CPC Class Codes: G01S 7/032 Constructional details for solid-state radar subsystems

Abstract

A radar transceiver, including at least one oscillator tunable using a control voltage, at least one mixer, and at least one antenna for transmitting and receiving ultra-high-frequency signals, the mixer mixing the receive signal with the signal of the oscillator and outputting a demodulated signal, and in which the at least one oscillator, the at least one mixer, and the at least one antenna are situated on a single chip located next to one another in one plane.

Claims

1-8. -8. (canceled)

9. A radar transceiver, comprising:

at least one oscillator tunable using a control voltage;

at least one mixer; and

at least one antenna for transmitting and receiving ultra-high-frequency signals;

wherein the mixer mixes a received signal with a signal of the oscillator and outputting a demodulated signal, and

wherein the at least one oscillator, the at least one mixer, and the at least one antenna are situated on a single chip located next to one another in one plane.

10. The radar transceiver of claim 9, wherein a phase-locking loop circuit for regulating the oscillator in a phase locked loop is situated in the plane.

11. The radar transceiver of claim 9, wherein at least one amplifier is situated in the plane.

12. The radar transceiver of claim 9, wherein the at least one antenna includes a patch antenna.

13. The radar transceiver of claim 9, wherein the patch antenna is situated underneath a polyrod.

14. The radar transceiver of claim 9, wherein the chip includes a silicon-germanium semiconductor element.

15. The radar transceiver of claim 9, wherein bond pads are situated in the plane.

16. The radar transceiver of claim 9, wherein the at least one oscillator generates a frequency of 77 GHz.