WIRE AND SOLDER BOND FORMING METHODS

• US 20080119036A1
• Filed: 11/20/2006
• Published: 05/22/2008
• Est. Priority Date: 11/20/2006
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Muzzy, Christopher D., Daubenspeck, Timothy H., Sauter, Wolfgang, Gambino, Jeffrey P.
• Granted Patent: US 7,601,628 B2
• Time in Patent Office: Days
• US Class Current: 438/612
• CPC Class Codes: B23K 1/0016 Brazing of electronic components
• CPC Class Codes: B23K 1/20 Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating preparation of surfaces in particular ways, see the relevant classes for the treatments or the materials treated, e.g. C04B, C23C
• CPC Class Codes: B23K 20/004 Wire welding
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04073 Bonding areas specifically adapted for connectors of different types
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48824 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/85011 : Chemical cleaning, e.g. etching, flux
• CPC Class Codes: H01L 23/3171 : the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

Methods of forming wire and solder bonds are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer; forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region; forming the solder bond to the solder bond metal region while the wire bond metal region is covered; exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and forming the wire bond to the wire bond metal region. Wire bonds and solder bonds can be made accessible on a single multi-part wafer (MPW) or on a single chip, if necessary, and can be formed substantially simultaneously.

Claims

1. A method of forming a wire bond and a solder bond, the method comprising:

providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer;

forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region;

forming the solder bond to the solder bond metal region while the wire bond metal region is covered;

exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and

forming the wire bond to the wire bond metal region.

2. The method of claim 1, wherein the first and second opening forming includes:

forming a first photoresist over the silicon nitride layer over the solder bond metal region and the wire bond metal region;

forming an intermediate opening through the first photoresist over only the solder bond metal region;

removing the silicon nitride layer over only the solder bond metal region using the intermediate opening;

removing the first photoresist;

depositing an uncured photosensitive polyimide (PSPI) layer as the material;

forming the first opening through the uncured PSPI layer over the wire bond metal region and the second opening through the uncured PSPI layer over the solder bond metal region;

curing the PSPI layer; and

etching to expose the solder bond metal region and remove the silicon nitride layer to the silicon oxide layer over the wire bond metal region.

3. The method of claim 2, wherein the solder bond forming includes:

depositing a ball limiting metallurgy (BLM) layer;

depositing a second photoresist;

forming an opening in the second photoresist to the BLM layer over only the solder bond metal region;

forming the solder bond in the second photoresist opening; and

removing the second photoresist and the BLM layer except the BLM layer under the solder to expose the silicon oxide layer over the wire bond metal region.

4. The method of claim 3, wherein the second photoresist includes a photosensitive dry polymer resist.

5. The method of claim 3, further comprising:

performing a wet clean of the wire bond metal region subsequent to the silicon oxide layer removing; and

cleaning and reflowing the solder bond.

6. The method of claim 1, wherein the first and second opening forming includes:

forming an uncured polyimide layer as the material over the silicon nitride layer over the solder bond metal region and the wire bond metal region;

forming the first opening through the uncured polyimide layer to the silicon oxide layer over only the wire bond metal region using a first photoresist that covers the solder bond metal region;

removing the first photoresist;

forming the second opening through the uncured polyimide layer to only the solder bond metal region using a second photoresist that covers the wire bond metal region;

removing the second photoresist; and

curing the polyimide layer.

7. The method of claim 6, wherein the solder bond forming includes:

depositing a ball limiting metallurgy (BLM) layer;

depositing a third photoresist;

forming an opening in the third photoresist over only the solder bond metal region to the BLM layer;

forming the solder bond in the third photoresist opening; and

removing the third photoresist and the BLM layer except the BLM layer under the solder to expose the silicon oxide layer over the wire bond metal region.

8. The method of claim 7, wherein the third photoresist includes a photosensitive dry polymer resist.

9. The method of claim 7, further comprising:

performing a wet clean of the wire bond metal region subsequent to the silicon oxide layer removing; and

cleaning and reflowing the solder bond.

10. The method of claim 6, wherein the uncured polyimide layer is non-photosensitive.

11. The method of claim 1, wherein each of the solder bond and wire bond metal regions includes one of:

aluminum and copper.

12. A method of forming a wire bond and a solder bond, the method comprising:

providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer;

forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region by;

forming a first photoresist over the silicon nitride layer over the solder bond metal region and the wire bond metal region,

forming an intermediate opening over only the solder bond metal region through the first photoresist,

removing the silicon nitride layer over only the solder bond metal region using the intermediate opening,

removing the first photoresist,

depositing an uncured photosensitive polyimide (PSPI) layer as the material,

forming the first opening through the PSPI layer over the wire bond metal region and the second opening through the PSPI layer over the solder bond metal region, and

curing the PSPI layer;

etching to expose the solder bond metal region and remove the silicon nitride layer to the silicon oxide layer over the wire bond metal region;

forming the solder bond to the solder bond metal region while the wire bond metal region is covered;

exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and

forming the wire bond to the wire bond metal region.

13. The method of claim 12, wherein the solder bond forming includes:

depositing a ball limiting metallurgy (BLM) layer;

depositing a second photoresist;

forming an opening in the second photoresist over only the solder bond metal region to the BLM layer;

forming the solder bond in the second photoresist opening; and

removing the second photoresist and the BLM layer except the BLM layer under the solder bond to expose the silicon oxide layer over the wire bond metal region.

14. The method of claim 13, wherein the second photoresist includes a photosensitive dry polymer resist.

15. The method of claim 13, further comprising:

performing a wet clean of the wire bond metal region subsequent to the silicon oxide layer removing; and

cleaning and reflowing the solder bond.

16. A method of forming a wire bond and a solder bond, the method comprising:

providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer;

forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region by;

forming an uncured polyimide layer as the material over the silicon nitride layer over the solder bond metal region and the wire bond metal region,

forming the first opening through the uncured polyimide layer to the silicon oxide layer over only the wire bond metal region using a first photoresist that covers the solder bond metal region,

removing the first photoresist,

forming the second opening through the uncured polyimide layer to only the solder bond metal region using a second photoresist that covers the wire bond metal region,

removing the second photoresist, and

curing the polyimide layer;

forming the solder bond to the solder bond metal region while the wire bond metal region is covered;

exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and

forming the wire bond to the wire bond metal region.

17. The method of claim 16, wherein the solder bond forming includes:

depositing a ball limiting metallurgy (BLM) layer;

depositing a third photoresist;

forming an opening in the third photoresist over only the solder bond metal region to the BLM layer;

forming the solder bond in the third photoresist opening; and

removing the third photoresist and the BLM layer except the BLM layer under the solder bond to expose the silicon oxide layer over the wire bond metal region.

18. The method of claim 17, wherein the third photoresist includes a photosensitive dry polymer resist.

19. The method of claim 17, further comprising:

performing a wet clean of the wire bond metal region subsequent to the silicon oxide layer removing; and

cleaning and reflowing the solder bond.

20. The method of claim 16, wherein the uncured polyimide layer is non-photosensitive.