System and Method for Matching Diffraction Patterns

• US 20080120051A1
• Filed: 11/06/2007
• Published: 05/22/2008
• Est. Priority Date: 08/06/2002
• Status: Active Grant

• Current Assignee: AMRI Americium, LLC
• Original Assignee: SSCI, Inc.
• Inventors: IVANISEVIC, Igor, Bates, Simon, Stahly, Barbara C., Bugay, David E., Hallenbeck, Donald R.
• Granted Patent: US 7,715,527 B2
• Time in Patent Office: Days
• US Class Current: 702/67
• CPC Class Codes: G01N 23/2055 Analysing diffraction patterns

Abstract

A method of analyzing patterns. The method comprises: receiving a first diffraction pattern; receiving a second diffraction pattern; receiving a third diffraction pattern; determining a similarity between the first and second diffraction patterns; determining a similarity between the first and third diffraction pattern; determining a similarity between the second and third diffraction pattern; and performing hierarchical cluster analysis on the first and second diffraction pattern based on the determined similarity.

Claims

1-154. -154. (canceled)

155. A method of analyzing patterns, comprising:

receiving a first diffraction pattern;

receiving a second diffraction pattern;

receiving a third diffraction pattern;

detecting the characteristic peaks of the first diffraction pattern;

detecting the characteristic peaks of the second diffraction pattern;

detecting the characteristic peaks of the third diffraction pattern;

determining a first similarity between the first and the second diffraction patterns based on the characteristic peaks of the first and the second diffraction patterns;

determining a second similarity between the first and the third diffraction patterns based on the characteristic peaks of the first and the third diffraction patterns;

determining a third similarity between the second and the third diffraction patterns based on the characteristic peaks of the second and the third diffraction patterns;

performing hierarchical cluster analysis on the first, the second, and the third diffraction pattern based on the determined first, the second, and the third similarity; and

displaying the results of the hierarchical cluster analysis.

156. The method of claim 155, wherein determining the similarities based on the peaks comprises:

detecting crystalline peaks in the diffraction patterns; and

matching the diffraction patterns based on the detected crystalline peaks.

157. The method of claim 156, wherein matching the diffraction patterns based on the detected crystalline peaks further comprises comparing one or more detected crystalline peaks in a diffraction pattern with one or more detected crystalline peaks in another diffraction pattern.

158. The method of claim 155, wherein determining the similarities based on the peaks comprises:

detecting amorphous peaks in the diffraction patterns; and

matching the diffraction patterns based on the detected amorphous peaks.

159. The method of claim 158, wherein matching the diffraction patterns based on the detected amorphous peaks further comprises comparing one or more detected amorphous peaks in a diffraction pattern with one or more detected amorphous peaks in another diffraction pattern.

160. The method of claim 155, wherein determining the first similarity comprises comparing one or more characteristic peaks in the first diffraction pattern with one or more characteristic peaks in the second diffraction pattern.

161. The method of claim 155, further comprising X-shifting the first diffraction pattern prior to determining the similarity between the first diffraction pattern and the second diffraction pattern and determining the similarity between the first diffraction pattern and the third diffraction pattern.

162. The method of claim 161, wherein the X-shifting is done automatically.

163. The method of claim 155, wherein the results of the hierarchical cluster analysis are displayed as a dendrogram.

165. The method of claim 162, wherein the results of the hierarchical cluster analysis are displayed as a dendrogram.

164. A method of analyzing patterns, comprising:

receiving a first diffraction pattern;

receiving a second diffraction pattern;

determining the characteristic peaks of the first diffraction pattern;

determining the characteristic peaks of the second diffraction pattern;

determining a similarity between the first and the second diffraction patterns based on the characteristic peaks of the first and the second diffraction patterns;

performing hierarchical cluster analysis on the first and second diffraction pattern based on the determined similarity; and

displaying the results of the hierarchical cluster analysis.