SELECTIVE ELECTROLESS DEPOSITION FOR SOLAR CELLS

• US 20080121276A1
• Filed: 11/29/2006
• Published: 05/29/2008
• Est. Priority Date: 11/29/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Shanmugasundram, Arulkumar, Bachrach, Robert Z., Lopatin, Sergey, Gay, Charles, Eaglesham, David
• Application Number:
  US11/564,812
• Publication Number:
  US 20080121276A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/022433 Particular geometry of the grid contacts
• CPC Class Codes: H01L 31/02245 for metallisation wrap-through [MWT] type solar cells
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A metal contact structure of a solar cell substrate includes a contact with a conductive layer or a capping layer that is formed using an electroless plating process. The contact may be disposed within a hole formed through the solar cell substrate or on a non-light-receiving surface of the solar cell substrate. The electroless plating process for the conductive layer uses a seed layer that includes an activation layer for electroless plating.

Claims

1. A metal contact structure for a solar cell comprising:

a solar cell substrate having a base region and an emitter region;

a contact disposed adjacent to the emitter region, the contact having a bulk conductive layer and a capping layer that covers the bulk conductive layer.

2. The contact structure of claim 1, wherein the capping layer comprises a material selected from the group consisting of cobalt boride (CoB), cobalt phosphide (CoP), cobalt tungsten phosphide (CoWP), cobalt tungsten boride (CoWB), cobalt molybdenum phosphide (CoMoP), cobalt molybdenum boride (CoMoB), cobalt rhenium boride (CoReB), cobalt rhenium phosphide (CoReP), nickel boride (NiB), nickel phosphide (NiP), nickel tungsten phosphide (NiWP), nickel tungsten boride (NiWB), nickel molybdenum phosphide (NiMoB), nickel molybdenum phosphide (NiMoP), nickel rhenium phosphide (NiReP), nickel rhenium boride (NiReB), tin (Sn), tin-copper (SnCu), tin-silver (SnAg), tin-copper-silver (SnCuAg), bismuth (Bi), cobalt (Co), nickel (Ni), antimony (Sb), and zinc (Zn).

3. The contact structure of claim 1, wherein the contact is disposed within a hole that is formed through the substrate.

4. The contact structure of claim 3, wherein the contact further comprises a seed layer disposed between the bulk conductive layer and the emitter region.

5. The contact structure of claim 4, wherein the seed layer comprises electrolessly deposited copper (Cu).

6. The contact structure of claim 3, wherein the contact further comprises a barrier layer disposed between the bulk conductive layer and the emitter region.

7. The contact structure of claim 6, wherein the barrier layer contains an element selected from a group consisting of titanium (Ti), cobalt (Co), nickel (Ni), tungsten (W), molybdenum (Mo), and tantalum (Ta), and wherein the element is electrolessly deposited.

8. The contact structure of claim 1, wherein the emitter region includes a heavily doped emitter region and a lightly doped emitter region, and an ohmic contact layer is disposed between the bulk conductive layer and the heavily doped emitter region.

9. The contact structure of claim 8, wherein the ohmic contact layer comprises a material selected from the group consisting of nickel (Ni), nickel phosphide (NiP), nickel boride (NiB), cobalt (Co), cobalt tungsten (CoW), cobalt tungsten phosphide (CoWP), cobalt tungsten boride (CoWB), cobalt tungsten phosphide boride (CoWPB), cobalt nickel (CoNi), cobalt phosphide (CoP), cobalt boride (CoB), cobalt nickel phosphide (CoNiP), cobalt nickel boride (CoNiB), palladium (Pd), derivatives thereof, alloys thereof, and combinations thereof.

10. The contact structure of claim 1, wherein the bulk conductive layer comprises electroplated copper (Cu), silver (Ag), or a combination thereof.

11. The contact structure of claim 1, wherein the bulk conductive layer comprises electrolessly plated copper (Cu), silver (Ag), or a combination thereof.

12. The contact structure of claim 1, wherein the solar cell substrate further comprises a light-receiving surface and a non-light-receiving surface and the contact is disposed on the non-light-receiving surface.

13. A metal contact structure for a solar cell comprising:

a solar cell substrate having a base region and an emitter region;

a contact disposed adjacent to the emitter region, the contact having a bulk conductive layer and an electrolessly deposited seed layer disposed between the bulk conductive layer and the emitter region.

14. The contact structure of claim 13, wherein the contact further comprises a capping layer that covers the bulk conductive layer.

15. The contact structure of claim 13, wherein the seed layer comprises an activation layer for electroless deposition.

16. The contact structure of claim 15, wherein the activation layer comprises a material selected from the group consisting of nickel (Ni), nickel phosphide (NiP), nickel boride (NiB), cobalt (Co), cobalt tungsten (CoW), cobalt tungsten phosphide (CoWP), cobalt tungsten boride (CoWB), cobalt tungsten phosphide boride (CoWPB), cobalt nickel (CoNi), cobalt phosphide (CoP), cobalt boride (CoB), cobalt nickel phosphide (CoNiP), cobalt nickel boride (CoNiB), palladium (Pd), derivatives thereof, alloys thereof, and combinations thereof.

17. A method for forming a contact on a solar cell substrate, comprising:

providing a solar cell substrate having an emitter region; and

forming a contact having a bulk conductive layer adjacent the emitter region; and

forming a capping layer on the bulk conductive layer through an electroless plating process.

18. The method of claim 17, wherein the step of forming the contact comprises forming an activation layer adjacent the emitter region, and wherein the bulk conductive layer is formed on the activation layer through an electroless plating process.

19. The method of claim 18, wherein the step of forming the contact further comprises forming a barrier layer on the activation layer, and wherein the bulk conductive layer is formed on the barrier layer.

20. The method of claim 17, wherein the step of forming the contact further comprises forming a seed layer adjacent the emitter region through a PVD process and forming an activation layer on the seed layer, and wherein the bulk conductive layer is formed on the barrier layer.

21. The method of claim 17, wherein the step of forming the contact further comprises forming an ohmic contact layer adjacent the emitter region, and wherein the bulk conductive layer is formed on the ohmic contact layer.

22. A method for forming a contact on a solar cell substrate, comprising:

providing a solar cell substrate;

forming an activation layer for electroless deposition; and

forming a bulk conductive layer for the contact on the activation layer.

23. The method of claim 22, further comprising:

forming a capping layer to cover the bulk conductive layer.

24. The method of claim 23, further comprising:

forming a barrier layer in between the activation layer and the bulk conductive layer.

25. The method of claim 22, wherein the substrate has a through-hole and the activation layer is formed on the sidewalls of the through-hole.

26. The method of claim 25, wherein the process of forming a bulk conductive layer on the activation layer comprises:

forming a seed layer on the activation layer through an electroless plating process; and

forming a conductive layer on the seed layer though an electrochemical plating process.

27. The method of claim 25, wherein the process of forming a bulk conductive layer comprises forming a conductive layer on the activation layer through an electroless plating process.

28. The method of claim 22, wherein the process of forming a bulk conductive layer on the activation layer is an electroless plating process.