Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates
First Claim
1. A process for forming a multilayer three-dimensional structure, comprising:
- (a) forming and adhering a first layer of material to a dielectric substrate or to a substrate containing at least one region of dielectric material;
(b) forming an adhering at least one layer to a previously formed layer to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of the first layer of material comprises;
(i) depositing an adhesion layer material and/or a seed layer material onto at least a portion of a surface of the substrate;
(ii) depositing at least one of a structural material and/or sacrificial material onto at least a portion of an adhesion layer and/or seed layer material;
wherein prior to completion of formation of a last layer of the structure, removing portions of any adhesion layer material and/or seed layer material from the substrate that is not covered by structural material.
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Abstract
Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
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Citations
4 Claims
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1. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a first layer of material to a dielectric substrate or to a substrate containing at least one region of dielectric material; (b) forming an adhering at least one layer to a previously formed layer to build up a three-dimensional structure from a plurality of adhered layers; wherein the formation of the first layer of material comprises; (i) depositing an adhesion layer material and/or a seed layer material onto at least a portion of a surface of the substrate; (ii) depositing at least one of a structural material and/or sacrificial material onto at least a portion of an adhesion layer and/or seed layer material; wherein prior to completion of formation of a last layer of the structure, removing portions of any adhesion layer material and/or seed layer material from the substrate that is not covered by structural material. - View Dependent Claims (4)
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2. A process for forming a multilayer three-dimensional structure, comprising:
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(a) forming and adhering a first layer of material to a substrate; (b) forming an adhering at least one layer to a previously formed layer to build up a three-dimensional structure from a plurality of adhered layers; wherein the formation of an nth layer comprises; (i) depositing an adhesion layer material and/or a seed layer material onto a surface of the (n−
1)th layer;(ii) depositing at least one of a first material and/or a second material onto at least a portion of the adhesion layer material and/or seed layer material; wherein at least one of the first or second materials comprises a structural material, and wherein prior to completion of formation of a last layer of the structure, removing portions of any adhesion layer material and/or seed layer material located on the surface of the (n−
1)th layer that is not covered by structural material. - View Dependent Claims (3)
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Specification