METHOD OF FABRICATING THIN FILM TRANSISTOR
First Claim
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1. A method of fabricating an electronic device, comprising the steps of:
- (a) forming an anodized layer having a thickness greater than a desired thickness;
(b) forming an electrically conductive layer on the anodized layer;
(c) removing the conductive layer in a selected area to expose the anodized layer; and
(d) removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
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Abstract
Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
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6 Claims
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1. A method of fabricating an electronic device, comprising the steps of:
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(a) forming an anodized layer having a thickness greater than a desired thickness; (b) forming an electrically conductive layer on the anodized layer; (c) removing the conductive layer in a selected area to expose the anodized layer; and (d) removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification