LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF

• US 20080121907A1
• Filed: 08/08/2006
• Published: 05/29/2008
• Est. Priority Date: 08/08/2006
• Status: Abandoned Application

• Current Assignee: Formosa Epitaxy Incorporated (Epistar Corporation)
• Original Assignee: Formosa Epitaxy Incorporated (Epistar Corporation)
• Inventors: Song, Wen-Joe, Lin, Yi-Fong, Pan, Shyi-Ming, Wen, Way-Jze, Huang, Kuo-Ruei, Tseng, Huan-Che, Chien, Fen-Ren
• Application Number:
  US11/309,445
• Publication Number:
  US 20080121907A1
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.

Claims

1. A light emitting diode (LED), including:

a substrate;

a first type doping semiconductor layer, formed on the substrate;

a light emitting layer, formed on a portion of the first type doping semiconductor layer;

a second type doping semiconductor layer, formed on the light emitting layer;

a first dielectric layer, formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer;

a first conductive plug, passing through the first dielectric layer and electrically connected with the first type doping semiconductor layer;

a first electrode, formed on the first dielectric layer and electrically connected with the first type doping semiconductor layer through the first conductive plug; and

a second electrode, electrically connected with the second type doping semiconductor layer.

2. The LED as claimed in claim 1, further includes a second dielectric layer formed on a portion of the second type doping semiconductor layer.

3. The LED as claimed in claim 2, further includes a second conductive plug formed in the second dielectric layer, wherein the second electrode is electrically connected with the second type doping semiconductor layer through the second conductive plug.

4. The LED as claimed in claim 1, further includes a transparent conducting layer disposed between the second doping semiconductor layer and the second electrode.

5. The LED as claimed in claim 1, wherein the material of the first type doping semiconductor layer, the light emitting layer and the second doping semiconductor layer includes III-V compound semiconductor material.

6. The LED as claimed in claim 5, wherein the III-V compound semiconductor material includes GaN, GaAIN or GaInN.

7. The LED as claimed in claim 1, wherein the first type doping semiconductor layer is an n-type doping semiconductor layer, and the second type doping semiconductor layer is a p-type doping semiconductor layer.

8. The LED as claimed in claim 1, wherein the first type doping semiconductor layer is a p-type doping semiconductor layer, and the second type doping semiconductor layer is an n-type doping semiconductor layer.

9. The LED as claimed in claim 1, wherein the material of the substrate includes sapphire, carborundum, spinel or silicon.

10-17. -17. (canceled)