HIGH EFFICIENCY WHITE, SINGLE OR MULTI-COLOR LIGHT EMITTING DIODES (LEDS) BY INDEX MATCHING STRUCTURES
First Claim
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1. An optoelectronic device, comprising:
- (a) a substrate;
(b) an ensemble comprised of insulating and semiconducting materials formed on the substrate and including one or more III-nitride active layers for emitting light; and
(c) an overstructure, formed over the ensemble, for suppressing guided modes within the ensemble by having an index of refraction at least matching an index of refraction of the ensemble, wherein the overstructure acts as a light extractor for the emitted light.
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Abstract
Light emitting diode (LED) structures with an overstructure material having a refractive-index matched to the active layer and ways to produce such materials are disclosed. Various implementations of such structures to provide very high extraction efficiency and color control such as white light emission are also disclosed.
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Citations
15 Claims
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1. An optoelectronic device, comprising:
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(a) a substrate; (b) an ensemble comprised of insulating and semiconducting materials formed on the substrate and including one or more III-nitride active layers for emitting light; and (c) an overstructure, formed over the ensemble, for suppressing guided modes within the ensemble by having an index of refraction at least matching an index of refraction of the ensemble, wherein the overstructure acts as a light extractor for the emitted light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An optoelectronic device, comprising:
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(a) one or more III-nitride active layers for emitting light; and (b) an overstructure, formed over the layers, that suppresses light trapped within the III-nitride active layers by using, as an escape facilitator, a material with an index of refraction at least matching an index of refraction of the III-nitride active layers, in order to extract the emitted light from the device.
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14. A method of fabricating an optoelectronic device, comprising:
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(a) providing a substrate; (b) forming an ensemble comprised of insulating and semiconducting materials on the substrate and including one or more III-nitride active layers for emitting light; and (c) forming an overstructure, over the ensemble, for suppressing guided modes within the ensemble by having an index of refraction at least matching an index of refraction of the ensemble, wherein the overstructure acts as a light extractor for the emitted light.
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15. A method of fabricating an optoelectronic device, comprising:
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(a) creating one or more III-nitride active layers for emitting light; and (b) creating an overstructure, over the III-nitride active layers, that suppresses light trapped within the III-nitride active layers by using, as an escape facilitator, a material with an index of refraction at least matching an index of refraction of the III-nitride active layers, in order to extract the emitted light from the device.
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Specification