Method for producing an optoelectronic component, and an optoelectronic component

• US 20080121923A1
• Filed: 09/26/2007
• Published: 05/29/2008
• Est. Priority Date: 09/26/2006
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hoss, Christine, Lell, Alfred, Strauss, Uwe, Harle, Volker
• Granted Patent: US 9,431,580 B2
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: H01S 5/0287 Facet reflectivity

Abstract

A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.

Claims

1. A method for producing an optoelectronic component, comprising the steps of:

A) providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation; and

B) applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.

2. The method as claimed in claim 1, in which the first surface is a side surface of the semiconductor layer sequence.

3. The method as claimed in claim 1, in which the first surface is adjacent to the active region (20).

4. The method as claimed in claim 1, in which the first surface comprises a radiation exit area.

5. The method as claimed in claim 1, in which a metal oxide and/or a semimetal oxide is applied in method step B).

6. The method as claimed in claim 1, in which a nitride is applied in method step B).

7. The method as claimed in claim 1, in which a first layer and a second layer are applied as a layer pair in method step B).

8. The method as claimed in claim 7, in which a plurality of layer pairs are applied.

9. The method as claimed in claim 5, in which the metal oxide or the semimetal oxide comprises at least one material from a group consisting of:

niobium pentoxide,

hafnium oxide,

aluminum oxide,

silicon dioxide,

titanium dioxide,

tantalum pentoxide, and

zirconium dioxide.

10. The method as claimed in claim 6, in which the nitride comprises silicon nitride.

11. The method as claimed in claim 7, in which tantalum pentoxide and/or zirconium dioxide is applied as first layer and silicon dioxide is applied as second layer.

12. The method as claimed in claim 1, further comprising the step of:

C) applying at least one layer to a second surface by means of an ion assisted application method, the second surface being arranged on a side of the semiconductor layer sequence that is remote from the first surface.

13. The method as claimed in claim 12, in which the at least one layer which is applied in method step B) is different from the layer which is applied in method step C).

14. The method as claimed in claim 12, wherein method steps B) and C) are carried out simultaneously.

15. The method as claimed in claim 2, in which, in method step B), the layer is applied to all the side surfaces.

16. The method as claimed in claim 1, in which the ion assisted application method is ion plating or reactive ion plating.

17. An optoelectronic component, obtainable by a method as claimed in claim 1.

18. An optoelectronic component, comprising:

a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation; and

at least one layer on at least one surface, wherein the layer can be produced by means of an ion assisted application method and has a metal oxide and/or semimetal oxide.

19. The optoelectronic component as claimed in claim 18, wherein the at least one layer has a peak-to-peak roughness of less than approximately 4 nm.

20. The optoelectronic component as claimed in claim 18, wherein the layer has a refractive index of greater than or equal to 2.25.

21. The optoelectronic component as claimed in claim 18, wherein the surface comprises a side surface of the semiconductor layer sequence.

22. The optoelectronic component as claimed in claim 21, wherein the side surface is adjacent to the active layer.

23. The optoelectronic component as claimed in claim 18, wherein the surface comprises a light exit area.