METHOD OF FORMING SENSOR FOR DETECTING GASES AND BIOCHEMICAL MATERIALS, INTEGRATED CIRCUIT HAVING THE SENSOR, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT

• US 20080121946A1
• Filed: 04/18/2007
• Published: 05/29/2008
• Est. Priority Date: 08/31/2006
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: LEE, Sang Hoon, KANG, Kwang Yong, JU, Chull Won, KIM, Sang Hyeob, YOUN, Doo Hyeb, MAENG, Sunglyul, PARK, Jonghyurk
• Application Number:
  US11/736,658
• Publication Number:
  US 20080121946A1
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/122 Circuits particularly adapted therefor, e.g. linearising circuits
• CPC Class Codes: G01N 27/127 comprising nanoparticles

Abstract

A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

Claims

1. An integrated circuit comprising:

a semiconductor substrate;

a sensor for detecting gases and biochemical materials, the sensor including a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes;

a heater formed on a second region adjacent to the sensor on the semiconductor substrate; and

a signal processor formed by a metal oxide semiconductor field effect transistor (MOSFET) formed in a third region of the semiconductor substrate to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor.

2. The integrated circuit of claim 1, wherein the metal oxide nano structure layer is composed of zinc oxide, indium oxide, tin oxide, tungsten oxide, or vanadium oxide.

3. The integrated circuit of claim 1, wherein the pair of electrodes are formed of polycrystalline metal composed of Au, Cu, Ti, Ni, or a combination of these materials.

4. The integrated circuit of claim 1, wherein the pair of electrodes are formed by a stacked structure of Ni and Au, a stacked structure of Au and Cu, or a stacked structure of Ti and Cu.

5. The integrated circuit of claim 1, wherein the heater comprises an n-channel or a p-channel MOSFET.

6. The integrated circuit of claim 1, wherein the heater is formed by a stripe-shaped metal pattern with a high melting point.

7. A method of manufacturing an integrated circuit, comprising:

forming a plurality of MOSFET devices on a substrate; and

forming a sensor for detecting gases and biochemical materials on the plurality of MOSFET devices,

wherein the forming of the sensor comprises;

forming a passivation film covering the plurality of MOSFET devices on the substrate;

forming at least one pair of electrodes on the passivation film; and

forming a metal oxide nano structure layer on the surfaces of the pair of electrodes at a temperature in a range from room temperature to 400°

C.

8. The method of claim 7, wherein the forming of the plurality of MOSFET devices on the substrate comprises forming a MOSFET device that constitutes a signal processor for processing a predetermined signal obtained by a quantity change of a current flowing through the pair of electrodes of the sensor.

9. The method of claim 7, wherein the forming of the plurality of MOSFET devices comprises forming a MOSFET device that constitutes a heater for supplying heat to the sensor.

10. A method of forming a sensor for detecting gases and biochemical materials, comprising:

forming electrodes on a substrate; and

forming a metal oxide nano structure layer on surfaces of the electrodes at a temperature in the range from room temperature to 400°

C.

11. The method of claim 10, wherein the metal oxide nano structure layer is formed by radio-frequency (RF) sputtering.

12. The method of claim 10, wherein the metal oxide nano structure layer is composed of zinc oxide, indium oxide, tin oxide, tungsten oxide, or vanadium oxide.

13. The method of claim 12, wherein, when forming the metal oxide nano structure layer, the metal oxide nano structure layer is formed by doping a p-type impurity.

14. The method of claim 12, wherein, when forming the metal oxide nano structure layer, the metal oxide nano structure layer is formed by doping an n-type impurity.

15. The method of claim 10, wherein the forming of the metal oxide nano structure layer is performed in a chamber having a ZnO target, and by supplying ambient gas including O₂ and Ar into the chamber.

16. The method of claim 15, wherein the ambient gas comprises O₂ and Ar supplied at a flow rate ratio (O₂/Ar) of 0.2 to 0.4.

17. The method of claim 10, wherein the electrodes are composed of a polycrystalline conductive material.