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Finned memory cells and the fabrication thereof

  • US 20080121970A1
  • Filed: 08/31/2006
  • Published: 05/29/2008
  • Est. Priority Date: 08/31/2006
  • Status: Active Grant
First Claim
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1. A method of forming a memory array, comprising:

  • forming a plurality fins in a substrate that protrude from a substrate;

    after forming the plurality fins, isotropically etching the fins to reduce a width of the fins and to round an upper surface of the fins;

    forming a first dielectric layer overlying the isotropically etched fins;

    forming a first conductive layer overlying the first dielectric layer;

    forming a second dielectric layer overlying the first conductive layer; and

    forming a second conductive layer overlying the second dielectric layer.

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