INDUCTOR FORMED ON A SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME

• US 20080122028A1
• Filed: 08/31/2006
• Published: 05/29/2008
• Est. Priority Date: 08/31/2006
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Ou, Jun-Hong, Hsu, Ji-Wei, Chen, Jui-Fang, Hsu, Tsun-Lai
• Granted Patent: US 7,948,055 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor

Abstract

An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

Claims

1. An inductor formed on a semiconductor substrate, comprising:

a single metal layer; and

an insulator layer, wherein

the metal layer constitutes the coil of the inductor,

the insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

2. The inductor of claim 1, wherein the insulator slot is formed using silicon oxide.

3. The inductor of claim 1, wherein the insulator layer comprises a row of insulator slots arranged along the coil of the inductor.

4. An inductor formed on a semiconductor substrate, comprising:

a plurality of metal layers; and

an insulator layer, wherein

the metal layers constitute the coil of the inductor,

the insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in one the metal layers.

5. The inductor of claim 4, wherein the insulator slot is formed using silicon oxide.

6. The inductor of claim 4, wherein the insulator layer comprises a row of insulator slots arranged along the coil of the inductor.

7. The inductor of claim 4, wherein each insulator slot is encompassed in the same one of the metal layers.

8. The inductor of claim 4, wherein the insulator layer comprises a plurality of insulator slots, and the insulator slots are distributed in each one of the metal layers.

9. The inductor of claim 4, wherein the metal layers are connected in parallel to constitute the coil of the inductor.

10. The inductor of claim 4, wherein the metal layers are connected in series to constitute the coil of the inductor.

11. A method for forming an inductor on a semiconductor substrate, comprising:

forming a single metal layer on the semiconductor substrate; and

forming an insulator layer on the semiconductor substrate, wherein

the metal layer constitutes the coil of the inductor,

the insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

12. The method of claim 11, wherein the insulator slot is formed using silicon oxide.

13. The method of claim 11, wherein the insulator layer comprises a row of insulator slots arranged along the coil of the inductor.

14. A method for forming an inductor on a semiconductor substrate, comprising:

forming a plurality of metal layers on the semiconductor substrate; and

forming an insulator layer on the semiconductor substrate, wherein

the metal layers constitute the coil of the inductor,

the insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in one the metal layers.

15. The method of claim 14, wherein the insulator slot is formed using silicon oxide.

16. The method of claim 14, wherein the insulator layer comprises a row of insulator slots arranged along the coil of the inductor.

17. The method of claim 14, wherein each insulator slot is encompassed in the same one of the metal layers.

18. The method of claim 14, wherein the insulator layer comprises a plurality of insulator slots, and the insulator slots are distributed in each one of the metal layers.

19. The method of claim 14, wherein the metal layers are connected in parallel to constitute the coil of the inductor.

20. The method of claim 14, wherein the metal layers are connected in series to constitute the coil of the inductor.